Method and Apparatus for Beam Control with Optical MEMS Beam Waveguide

ABSTRACT

A high density, low power, high performance information system, method and apparatus are described in which perpendicularly oriented processor and memory die stacks ( 130, 140, 150, 160, 170 ) include integrated deflectable MEMS optical beam waveguides (e.g.,  190 ) at each die edge (e.g.,  151 ) to provide optical communications ( 184 ) in and between die stacks by using a beam control method and circuit to maintain and adjust alignment over time by calibrating and updating X and Y counter values stored in deflection registers ( 541 - 542 ) to control DAC circuitry ( 546, 548 ) which generates and supplies deflection voltages to charging capacitors ( 551, 552 ) connected to deflection electrodes ( 195 - 197 ) positioned on and around each MEMS optical beam waveguide ( 193 - 194 ) to provide two-dimensional alignment and controlled feedback to adjust beam alignment and establish optical communication links between die stacks.

CROSS-REFERENCE TO RELATED APPLICATIONS

U.S. patent application Ser. No. ______, entitled “Optical Wafer and DieProbe Testing,” by inventors Michael B. McShane, Perry H. Pelley, andTab A. Stephens, Attorney Docket No. DN30544TK, filed on even dateherewith, describes exemplary methods and systems and is incorporated byreference in its entirety,

U.S. patent application Ser. No. ______, entitled “Die Stack withOptical TSVS,” by inventors Perry H. Pelley, Tab A. Stephens, andMichael B. McShane, Attorney Docket No. DN30660TK, filed on even dateherewith, describes exemplary methods and systems and is incorporated byreference in its entirety.

U.S. patent application Ser. No. ______, entitled “Communication SystemDie Stack,” by inventors Tab A. Stephens, Perry H. Pelley, and MichaelB. McShane, Attorney Docket No. FS40406TK, filed on even date herewith,describes exemplary methods and systems and is incorporated by referencein its entirety.

U.S. patent application Ser. No. ______, entitled “Integration of a MEMSBeam with Optical Waveguide and Deflection in Two Dimensions,” byinventors Tab A. Stephens, Perry H. Pelley, and Michael B. McShane,Attorney Docket No. FS40407ZR, filed on even date herewith, describesexemplary methods and systems and is incorporated by reference in itsentirety.

U.S. patent application Ser. No. ______, entitled “Optical Redundancy,”by inventors Perry H. Pelley, Tab A. Stephens, and Michael B. McShane,Attorney Docket No. FS40413NH, filed on even date herewith, describesexemplary methods and systems and is incorporated by reference in itsentirety.

U.S. patent application Ser. No. ______, entitled “Optical BackplaneMirror,” by inventors Tab A. Stephens, Perry H. Pelley, and Michael B.McShane, Attorney Docket No. FS40415TP, filed on even date herewith,describes exemplary methods and systems and is incorporated by referencein its entirety.

U.S. patent application Ser. No. ______, entitled “Optical Die TestInterface,” by inventors Michael B. McShane, Perry H. Pelley, and Tab A.Stephens, Attorney Docket No. FS40417TK, filed on even date herewith,describes exemplary methods and systems and is incorporated by referencein its entirety.

BACKGROUND OF TILE INVENTION

1. Field of the Invention

The present invention is directed in general to semiconductor devicesand methods for manufacturing same. In one aspect, the present inventionrelates to the fabrication of semiconductor devices or integratedcircuits with optical micro-electro-mechanical systems (MEMS) circuitsand devices.

2. Description of the Related Art

In information systems, data signal information is communicated betweendevices and circuits using different types of signal connections. Withelectrical conductor-based connections, such as conventional wires orthrough silicon vias (TSVs), there are power and bandwidth constraintsimposed by the power requirements and physical limitations of suchconductor-based connections. For example, stacked die modules have beenproposed to provide high density information systems, but the powerconsumption and associated heat dissipation requirements forcommunicating data signals between stacked die modules usingconductor-based connections can limit the achievable density. Inaddition, the bandwidth of such stacked die modules is limited by thenumber and inductance of TSVs and other conductor-based connections forsuch die stacks. To overcome such limitations, optical communicationsystems have been developed as a way of communicating at higherbandwidths with reduced power. With such optical communication systems,a monochromatic, directional, and coherent laser light beam is modulatedto encode information for transfer to other devices or circuits of thesystem, typically by transferring modulated light signals along anoptical fiber or waveguide path. Unfortunately, there are alignmentchallenges with using optical waveguides to transfer optical informationbetween different integrated circuit (IC) chips in a system in terms ofcost, complexity, and control requirements. These challenges arise fromthe tight alignment tolerances required to meet information transmissionrequirements and other use factors that can disrupt alignment duringdevice operation. Attempts have been made to overcome these challengesby using external mirrors or deflectors to optically transferinformation across free-space between different IC chips present theirown difficulties, costs, and control requirements. For example, theoptical transmitter, deflector structures, and the optical receiver notonly impose additional costs and complexity, but must also h aligned toensure a desired level of information transmission. In addition,alignment errors can be introduced by the system assembly process, aswell as vibration (e.g., dropping) or temperature changes during use.For example, components of an optical link may become misaligned if acell phone or notebook computer is dropped on a surface. Furthermore,the cost for designing and assembling components that are preciselyaligned may be cost prohibitive. Finally, control circuits and externalsignal deflection structures can increase the overall system complexity,thereby reducing possible signal bandwidth between different IC chips.As a result, the existing solutions for transferring modulated lightsignals along optical waveguide paths and between different IC chipsmake the implementation of high bandwidth optical interconnectsextremely difficult at a practical level.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention may be understood, and its numerous objects,features and advantages obtained, when the following detaileddescription is considered in conjunction with the following drawings, inwhich:

FIG. 1 illustrates a plan view of a communication system withside-by-side processor die stack and memory die stack modules connectedvia optical signals and arranged to form multiple subsystems on a board;

FIG. 2 illustrates a perspective view of a side-by-side die stack systemwith optical interconnects prior to rotation and attachment wherein aprocessor die stack module is oriented perpendicularly to one or inurememory die stack modules;

FIG. 3 illustrates a perspective view of the side-by-side die stacksystem with optical interconnects in FIG. 2 after rotation and alignmentwith solder ball arrays for connection to a system board;

FIG. 4 illustrates a perspective view of the side-by-side die stacksystem in FIG. 3 after attachment of the die stack system to the systemboard with solder ball or flip-chip conductors to illustrate howpoint-to-point optical communications can be used to communicate betweenindividual processor die and memory die in the die stack system;

FIG. 5 illustrates a perspective view of a selected processor die andmemory die in the die stack system of FIG. 4 to illustrate the opticalcrossbar alignment of point-to-point optical beams at a processor-memoryinterface;

FIG. 6 illustrates an enlarged perspective view of a MEMS optical beamwaveguide with multiple deflection electrodes to provide two-dimensionaldeflection for alignment of point-to-point optical interconnects;

FIG. 7 illustrates a perspective view of a plurality of side-by-side diestack systems with optical interconnects for attachment to a systemboard to illustrate how point-to-point optical communications can beused to communicate between individual die in the plurality ofside-by-side die stack systems;

FIGS. 8-17 illustrate partial plan and cutaway side views of variousstages in the production of an integrated circuit die including a MEMSoptical beam waveguide with multiple deflection electrodes positionedaround the MEMS optical beam waveguide according to a first exampleembodiment of the present disclosure;

FIGS. 18-23 illustrate partial plan and cutaway side views of variousstages in the production of an integrated circuit die including a MEMSoptical beam waveguide with multiple deflection electrodes positioned onand around the MEMS optical beam waveguide according to a second exampleembodiment of the present disclosure;

FIGS. 24-31 illustrate partial plan and cutaway side views of variousstages in the production of an integrated circuit die including a MEMSoptical beam waveguide with multiple deflection electrodes positioned onand around the MEMS optical beam waveguide according to a third exampleembodiment of the present disclosure;

FIG. 32 illustrates an example circuit diagram of a bias driver forgenerating separate deflection bias voltages for a plurality ofdifferent deflection electrodes for a MEMS optical beam waveguide;

FIG. 33 illustrates an example circuit diagram of a bias driver forgenerating MEMS beam plate voltages for vertical and lateral deflectionelectrodes for a MEMS optical beam waveguide;

FIG. 34 illustrates a first application for MEMS optical beams withtwo-dimensional deflection to communicate between two die withoutexternal deflection;

FIG. 35 illustrates a second application for MEMS optical beams withtwo-dimensional deflection to provide optical waveguide crossover withina die;

FIG. 36 illustrates a third application for MEMS optical beams withtwo-dimensional deflection to provide optical redundancy within a die;

FIG. 37 illustrates an optical redundancy circuit for replacing adefective optical circuit with a redundant optical circuit;

FIG. 38 illustrates a first die edge optical redundancy circuit forreplacing a defective optical MEMS beam deflector circuit with aredundant optical MEMS beam deflector circuit;

FIG. 39 illustrates a second die edge optical redundancy circuit forshifting around a defective optical MEMS beam deflector circuit with aspare optical MEMS beam deflector circuit; and

FIG. 40 illustrates a simplified flow chart of a beam control method forgenerating MEMS beam plate voltages for vertical and lateral deflectionelectrodes in accordance with selected embodiments of the presentdisclosure.

It will be appreciated that for simplicity and clarity of illustration,elements illustrated in the drawings have not necessarily been drawn toscale. For example, the dimensions of some of the elements areexaggerated relative to other elements for purposes of promoting andimproving clarity and understanding. Further, where consideredappropriate, reference numerals have been repeated among the drawings torepresent corresponding or analogous elements.

DETAILED DESCRIPTION

In this disclosure, improved high density, low power, high performanceinformation systems, methods, and apparatus are described that addressvarious problems in the art where various limitations and disadvantagesof conventional solutions and technologies will become apparent to oneof skill in the art after reviewing the remainder of the presentapplication with reference to the drawings and detailed descriptionprovided herein. In selected embodiments, a high density, low power,high performance information system, method and apparatus are describedin which integrated optical communications are provided in and betweenstacked semiconductor die devices by providing MEMS optical beamwaveguides with two-dimensional alignment and controlled feedback toadjust beam alignment. In the context of the present disclosure, an“optical beam” refers to an unmodulated light beam (directly from alight source, such as a laser, with no signal) or a modulated light beam(carrying a signal), where “light” can refer to any portion of theelectromagnetic spectrum, whether visible or not. In addition, a “MEMSoptical beam waveguide” refers to a physical structure for directing anoptical beam, and includes MEMS cantilever beam containing an opticalwaveguide. In embodiments where horizontal and vertical die stacks areincorporated on a system substrate, optical connections betweendifferent die stacks are providing by including deflectable MEMS opticalbeam waveguides with multiple deflection electrodes positioned on andaround the MEMS optical beam waveguides to provide two-dimensionaldeflection for aligning communications over an optical link between twodie without external deflection. A plurality of bias voltages for thedeflection electrodes at each MEMS optical beam waveguide may begenerated to control optical beam alignment by calibrating andcontinually adjusting digital MEMS optical beam waveguide deflectionvalues using a feedback signal (FB) which characterizes the degree ofoptical beam alignment. In selected embodiments, the die stacks mayinclude side-by-side processor die stack and memory die stack moduleswhich are connected perpendicularly to each other using an opticalcrossbar arrangement to provide point-to-point optical signals at theprocessor-memory interface so that each processor die can communicatewith any memory die in adjacent memory die stack modules and with anyprocessor die in adjacent processor die stack modules. Of course, itwill be appreciated that the die stack modules are not limited toprocessor or memory die stacks, and may be formed with any desired diefor other uses, so there may be other embodiments with other uses forthe structures described herein. The deflectable MEMS optical beamwaveguides may be used to provide different optical communicationfunctions, including providing point-to-point optical communicationsbetween two die without external deflection, providing optical waveguidecrossover within a die, providing optical redundancy within a die toreplace a defective optical circuit with a redundant optical circuit,and/or providing a die edge optical redundancy circuit for replacing adefective optical element with a redundant or spare optical element. Byproviding a replacement optical path which avoids or bypasses a failedcircuit element or MEMS optical beam waveguide, the replacement opticalpath(s) may be defined by programming a pair of MEMS optical beamwaveguide optical switches to shift around the defective circuit elementor MEMS optical beam waveguide, thereby improving die and stack yield.

Various illustrative embodiments of the present invention will now bedescribed in detail with reference to the accompanying figures. Whilevarious details are set forth in the following description, it will beappreciated that the present invention may be practiced without thesespecific details, and that numerous implementation-specific decisionsmay be made to the invention described herein to achieve the devicedesigner's specific goals, such as compliance with process technology ordesign-related constraints, which will vary from one implementation toanother. While such a development effort might be complex andtime-consuming, it would nevertheless be a routine undertaking for thoseof ordinary skill in the art having the benefit of this disclosure. Forexample, selected aspects are depicted with reference to simplifiedcross sectional drawings of a semiconductor device without includingevery device feature or geometry in order to avoid limiting or obscuringthe present invention. In addition, selected aspects are depicted withreference to simplified circuit diagram depictions without includingevery device circuit detail in order to avoid limiting or obscuring thepresent invention. Such descriptions and representations are used bythose skilled in the art to describe and convey the substance of theirwork to others skilled in the art. Some portions of the detaileddescriptions provided herein are also presented in terms of algorithmsand instructions that operate on data that is stored in a computermemory. In general, an algorithm refers to a self-consistent sequence ofsteps leading to a desired result, where a “step” refers to amanipulation of physical quantities which may, though need notnecessarily, take the form of optical, electrical, or magnetic signalscapable of being stored, transferred, combined, compared, and otherwisemanipulated. It is common usage to refer to these signals as bits,values, elements, symbols, characters, terms, numbers, or the like.These and similar terms may be associated with the appropriate physicalquantities and are merely convenient labels applied to these quantities.Unless specifically stated otherwise as apparent from the followingdiscussion, it is appreciated that, throughout the description,discussions using terms such as “processing” or “computing” or“calculating” or “determining” or “displaying” or the like, refer to theaction and processes of a computer system, hardware circuit, or similarelectronic device, that manipulates and transforms data represented asphysical (electronic) quantities within the computer system's registersand memories into other data similarly represented as physicalquantities within the computer system memories or registers or othersuch information storage, transmission or display devices. In addition,although specific example materials are described herein, those skilledin the art will recognize that other materials with similar propertiescan be substituted without loss of function. It is also noted that,throughout this detailed description, certain materials will be formedand removed to fabricate the MEMS optical beam waveguides and associatedcontrol circuits. Where the specific procedures for forming or removingsuch materials are not detailed below, conventional techniques to oneskilled in the art for growing, depositing, removing or otherwiseforming such layers at appropriate thicknesses shall be intended. Suchdetails are well known and not considered necessary to teach one skilledin the art of how to make or use the present invention.

Turning now to FIG. 1, there is shown a simplified plan view of aninformation system 100 with a plurality of die stacks arranged in rows11-19, 21-29, 31-39, 41-49, 51-59, 61-69 and columns (e.g., 11, 21, 31,41, 51, 61). In the depicted example, the information system 100includes side-by-side processor die stack modules (e.g., 15, 25, 35, 45,55, and 65) and memory die stack modules (e.g., 11-14 and 16-19)connected via optical signals 6, 7 and arranged to form multiplesubsystems (e.g., 10, 20, 30, 40, 50, 60) on a system board 5. Forexample, a first subsystem 10 includes a central processor die stackmodule 15 connected between a row of memory die stack modules 11-14 and16-19, all of which are connected together via optical signals 6. Insimilar fashion, the die stack modules 21-29 of the second subsystem 20are connected together via optical signals 6 between the die stackmodules 21-29, and are connected to the first subsystem 10 by one ormore optical signals 7 between the central processor die stack modules15, 25. Likewise, the rows of die stack modules 31-39, 41-49, 51-59, and61-69 forming subsystems 30, 40, 50, 60, respectively, are connectedtogether via optical signals 6, with connections between the subsystems30, 40, 50, 60 provided by one or more optical signals 7 between thecentral processor die stack modules 25, 35, 45, 55, 65.

With the disclosed information system 100, a high density, low power,high performance packaging arrangement of die stack modules uses opticalMEMs devices to provide optical communication links between die stacksin a subsystem, and between subsystems. For example, in a firstsubsystem 10, a microprocessor unit (MPU) die stack module 15 is formedwith TSVs, copper pillars, flip chip bumps (not shown) to providevertical signal and power conductors for the MPU die stack module 15. Inaddition, each MPU die may include optical MEMS devices, such as opticalbeam waveguides and optical feed-throughs (not shown), for sendingand/or receiving lateral optical beam signals 6, 7 to adjacent die stackmodules.

Once mounted on the system substrate board 5, the processor die stackmodules (e.g., 15, 25, 35, 45. 55, and 65) and memory die stack modules(e.g., 11-14 and 16-19) may be connected through conductors (not shown)in the substrate board 5 to connection pads 1-4 for electrical and/oroptical connection to external systems. In addition, the die stackmodules may be implemented with both horizontal and vertical die stacksto facilitate optical signal communication between multiple die stacksof microprocessors and memory die. For example, by orienting the centralMPU die stack module (e,g., 15) as a horizontal die stack and orientingthe memory die stack modules (e.g., 11-14, 16-19) as vertical diestacks, the MPU and memory die stack modules are perpendicular to eachother. This orientation enables each processor die in the MPU die stackmodule 15 to communicate with each of the memory die in the adjacentmemory die stack modules 14, 16 using direct optical signals 6. And byincluding optical feed-throughs in the memory die stack modules (e.g.,12-14 and 16-18), the central MPU die stack module (e.g., 15) cancommunicate through a memory die stack module to one or morenon-adjacent memory die stacks using feed-through optical signals 6. Insimilar fashion, by including optical feed-throughs in the processor diestack modules (e.g., 25, 35, 45, and 55), each processor in a centralMPU die stack module can communicate with every other processor in thesystem using feed-through optical signals 7. In support of the opticalsignal communications, each processor and memory die in the die stackmodules may be formed to integrate both transistor circuitry forimplementing information handling operations, and optical circuitry fortransmitting and/or receiving optical signal information via one or morewaveguides terminating in MEMS optical beam waveguides at the die edgeof the processor and memory die. By integrating multiple die stackmodules with an optical communication system, the resultingcommunication system 100 provides higher density and bandwidth due tothe replacement of electrical conductors (and associated inductances)with optical interconnects to provide a low cost, low power, highbandwidth stacked die assembly.

To illustrate a fabrication assembly of an example stacked die assembly,reference is now made to FIGS. 2-4. Beginning with FIG. 2, there isshown a perspective view of a side-by-side stacked die assembly withoptical interconnects in an initial stage of fabrication prior torotation and attachment to the contact pads 103-107 on the system board101. The depicted stacked die assembly includes a central processor diestack 150 which is formed with a plurality of processor die 151, 152,153. As shown in the enlarged view of the central processor die stack150 in FIG. 2, the processor die 151, 152, 153 are each orientedvertically (e.g., on a die edge) and vertically stacked together with afirst processor die 151 in the front (or left) position, a secondprocessor die 152 in the second position, and so on until the lastprocessor die 153 in the back (or right-most) position. The enlargedview of the processor die stack 150 in FIG. 2 also shows that a die edgeoptical MEMS waveguide beam 156 is formed in a die edge cavity 157 witha waveguide beam structure which includes an optical beam structure 159surrounded by an encapsulating waveguide structure 158 for guiding anymodulated light signals along the path of the optical beam structure159. In the central processor die stack 150, the processor die 151, 152,153 are attached together with film adhesive, fusion wafer bonding, orany other suitable die attachment mechanism (not shown). If desired, thecentral processor die stack 150 may also include heat spreader and/orsink structures positioned between and/or around the individualprocessor die 151-153 to dissipate heat therefrom. To facilitatedie-to-die signal and power connections within the processor die stack150, each processor die 151, 152, 153 may include through silicon via(TSV) conductors. In addition, at least an edge processor die 151 mayinclude a plurality of external pads or conductors 155 (e.g.,approximately 1000), such as a filled TSV or edge connection pads, forproviding electrical contact to thermoelectric devices, such as solderballs, copper pillars, or flip-chip bumps. In selected embodiments, theedge processor die 151 may also include optical TSV structures forproviding optical contact to optical routing structures (e.g., opticalbeam waveguides) in the system board 101. Once mounted on the systemboard 101, the processor die stack 150 may be connected throughconductors (not shown) in the system board 101 to connection pads 102for electrical connection to external systems. Finally, each processordie 151-153 may include a plurality of optical MEMS waveguide beams 156(e.g., approximately 100 to 200) at a lateral die edge for providingoptical die-to-die communication with or through adjacent die stacks.

The depicted stacked die assembly also includes a plurality of memorydie stacks (e.g., 130, 140, 160, and 170) positioned on opposite sidesof the central processor die stack 150. On the left of the centralprocessor die stack 150, a first memory die stack 130 includes aplurality of memory die 131, 132, 133 which are horizontally orientedand stacked together, and a second memory die stack 140 includes aplurality of memory die 141, 142, 143 which are horizontally orientedand stacked together. And to the right of the central processor diestack 150, a third memory die stack 160 includes a plurality of memorydie 161, 162, 163, 164 which are horizontally oriented and stackedtogether, and a fourth memory die stack 170 includes a plurality ofmemory die 171, 172. 173 which are horizontally oriented and stackedtogether. Though two memory stacks are shown on each side, it will beappreciated that additional or fewer memory die stacks may be used. Asshown in the enlarged view of the example memory die stack 160 in FIG.2, the memory die (e.g., 161-164) are each oriented to be horizontallystacked together with a first memory die 161 on the bottom, a secondmemory die 162 on top of the first memory die 161, and so on until thetop memory die 164 in the top position. In each memory die stack (e.g.,130, 140, 160, and 170), the memory die (e.g., 161-164, 171-173) areattached together with film adhesive, fusion wafer bonding, or any othersuitable die attachment mechanism (not shown). The enlarged view of thememory die stack 160 in FIG. 2 also shows that a die edge optical MEMSwaveguide beam 166 is formed in a die edge cavity 167 with a waveguidebeam structure which includes an optical beam structure 169 surroundedby an encapsulating waveguide structure 168 for guiding any modulatedlight signals along the path of the optical beam structure 169. Ifdesired, heat spreader and/or sink structures may be positioned betweenand/or around the memory die stacks to dissipate heat therefrom. Tofacilitate die-to-die signal and power connections within each memorydie stack, each memory die (e.g., 161-164, 171-173) may include TSVconductors, and at least an edge memory die (e.g., 161, 171) may includea plurality of external pads or conductors 165, 175 (e.g., approximately20) for edge bump connections to the system board 101, such as a filledTSV or edge connection pads. Once mounted on the system board 101, thememory die stacks may be connected through conductors (not shown) in thesystem board 101 to connection pads 102 for electrical connection toexternal systems. In addition, each memory die (e.g., 161-164, 171-173)may include a plurality of optical MEMS waveguide beams 166, 176 (e.g.,approximately 100 to 200) at a lateral die edge for providing opticaldie-to-die communication with or through adjacent die stacks.

To facilitate die-to-die signal connections within each die stack, eachdie may include optical TSV structures and angled mirror structures(e.g., 45 degree mirror structures) for deflecting optical signals froma first die to one or more additional die in the die stack. Foradditional details on semiconductor processing steps that may be used tofabricate the waveguide beams, optical TSV structures, and angled mirrorstructures, reference is now made to U.S. patent application Ser. No.______ (entitled “Optical Backplane Mirror” and filed herewith) which isincorporated by reference as if fully set forth herein. Though describedwith reference to selected optical backplane die embodiments, it will beappreciated that the fabrication process steps described in the “OpticalBackplane Mirror” application can also be used to form optical TSVstructures, and angled mirror structures in each die.

In other embodiments, the die in the die stacks 130. 140, 150, 160, 170,such as the processor die 151 or memory die 161, may be formed as acomposite of two separately manufactured die. In these embodiments, thefirst die includes electrical components that are formed using standardsemiconductor transistor fabrication technology, and the second dieincludes optical components, such a waveguides, modulators and lasersources, that are formed using primarily optical fabrication technology.By separately fabricating the composite die using different fabricationtechnologies, the manufacturing cost of processor die and the memory diecan be reduced, thus allowing for a lower cost of system 100. Inselected embodiments, the first and second composite die could becombined before stacking so the die stacks would be an assembly ofcomposite die. In other embodiments, the electrical and optical diewould remain separate until combined into the die stack modules.

In the illustrated die stack assembly shown in FIG. 2, the centralprocessor die stack 150 is oriented perpendicularly to the memory diestacks (e.g., 130, 140, 160, and 170), with the central processor diestack module 150 oriented as a vertical die stack 151-153, and thememory die stack modules 130, 140, 160, 170 oriented as horizontal diestacks 131-133, 141-143, 161-164, 171-173 so as to be perpendicular toeach other. This relative perpendicular orientation is maintained as thedepicted stacked die assembly is rotated ninety degrees around therotation axis 180, as illustrated in FIG. 3 which shows a perspectiveview of the side-by-side stacked die assembly with optical interconnectsin FIG. 2 after rotation and alignment. However, after rotation, thecentral processor die stack module 150 is oriented as a horizontal diestack 151-153, and the memory die stack modules 130, 140, 160, 170 areoriented as vertical die stacks 131-133, 141-143, 161-164. 171-173 so asto be perpendicular to each other. As illustrated in FIG. 3, theprocessor and memory die stack modules 130, 140, 150, 160, 170 areoriented and aligned with a corresponding plurality of thermoelectricconductor arrays 123-127 (e.g., solder balls, copper pillars, orflip-chip bumps) to make electrical connection with the contact pads103-107 on the system board 101. In particular, the rotated orientationof the die stack assembly positions the external pads or conductors(e.g., 155, 165, 175) on the processor and memory die stacks (e.g., 150,160, and 170) to make electrical contact with the contact pads (e.g.,105-107) on the system board 101.

Turning now to FIG. 4, there is shown a perspective view of theside-by-stacked die assembly in FIG. 3 after attachment of the processorand memory die stack modules 130, 140, 150, 160, 170 to the system board101 having external conductors 181, such as copper pillars, solder ballsor flip chip interconnects, connected on an opposite side. Though notvisible in FIG. 4, the thermoelectric conductor arrays 123-127 (fromFIG. 3) are positioned between the system board 101 and the processorand memory die stack modules 130, 140, 150, 160, 170 to make electricalconnection with the contact pads 103-107 on the system board 101. Inselected embodiments, the solder ball or flip chip arrays 123-127 aresoldered in place on the system board 101 in a reflow furnace, and thenthe stacked die assembly is placed on the solder ball or flip chiparrays 123-127 for a second reflow. In other embodiments, thethermoelectric conductor arrays 123-127 may be implemented with solderball or flip chip arrays that are formed as reflow solder balls on thebottom of the die stacks. In yet another embodiment, the solder ball orflip chip arrays 123-127 are placed on the system board 101 with flux,followed by placing the die stacks and reflowing the entire grouptogether.

Once attached to the system board 101, point-to-point opticalcommunications can be used to communicate between individual processordie and memory die in the stacked die assembly. For example, theprocessor die stack module 150 may communicate with the adjacent memorydie stacks 140, 160 using point-to-point optical beam signals 183, 184,respectively. And by using optical feed-throughs in the memory diestacks 140, 160 formed with waveguides in the die that are connected toMEMS optical beam waveguides at each die edge, the processor die stackmodule 150 may communicate with the non-adjacent memory die stacks 130,170 using point-to-point optical beam signals 182, 185.

Given the perpendicular orientation of the processor and memory die,each laterally disposed processor die (e.g., 151) may be disposed toprovide point-to-point optical communications with each of the pluralityof vertically disposed memory die (e.g., 161-164) in the adjacent memorydie stack (e.g., 160). To this end, the optical MEMS waveguide beams 156on the die edge of processor die 151 may be divided into groups, witheach group of MEMS waveguide beams assigned to a different memory die.To illustrate this grouping, reference is now made to FIG. 5 which showsa partial perspective view of the bottom processor die 151 and frontmemory die 164 from the stacked die assembly of FIG. 4 to illustrate theoptical crossbar alignment of point-to-point optical beams therebetween.As depicted, the optical MEMS waveguide beams on the die edge ofprocessor die 151 are divided into groups of MEMS waveguide beams 191,192, with each group assigned to a different memory die. In the depictedexample, the first group of optical MEMS waveguide beams 191 is assignedto communicate with the memory die 164 by making point-to-point opticalcommunications with a group of optical MEMS waveguide beams 111 on thememory die 164. As illustrated in FIG. 5, the terminal ends of theoptical MEMS waveguide beams are located on a hidden face of the memorydie 164 facing the first group of optical MEMS waveguide beams 191, andare therefore shown with dotted lines. In particular, a first opticalMEMS waveguide beam 190 on the processor die 151 is aligned to send anoptical signal 112 to a first optical MEMS waveguide beam 110 on thememory die 164. In similar fashion, the remainder of the first group ofoptical MEMS waveguide beams 191 on the processor die 151 is aligned tosend optical signals 113-114 to the remainder of the group of opticalMEMS waveguide beams 111 on the memory die 164. In similar fashion, thesecond group of optical MEMS waveguide beams 192 on the processor die151 is aligned to send optical signals (not shown) to a group of opticalMEMS waveguide beams 115 located on a hidden face of the memory die 163facing the second group of optical MEMS waveguide beams 192, and aretherefore shown with dotted lines, and so on. Bidirectionalcommunications over an optical link between two die requires a MEMSwaveguide beam at each end of the link since a transmitting beam must bealigned at a target receptor.

With the disclosed crossbar alignment, the die interface region definedby the intersection of the processor and memory die may include aplurality of optical MEMS waveguide beams (e.g., 191) at the processordie edge and a corresponding plurality of optical MEMS waveguide beams(e.g., 111) at the memory die edge. As a result, multiple optical beamscan be exchanged at the vertical die/horizontal die interface region.With spacing between adjacent MEMS waveguide beams on a die edgeapproaching 7-10 microns, the required angle for beam alignment becomessmall. In addition, each group of optical MEMS waveguide beams at avertical die/horizontal die interface region may include one or moreunmodulated beams, one or more feed-through unmodulated optical beams,one or more processor to memory optical beams, and/or one or morefeed-through modulated optical beams.

In addition to the perpendicular orientation of the processor and memorydie stacks, the ability to maintain point-to-point opticalcommunications between the processor and memory die stacks can beimpaired by a number of factors, such as the lateral stack spacing andany difference in die thickness or height between the processor andmemory die. Unmitigated, these factors can impose significant beam anglerequirements for the optical beam signals 183, 184 to and from theprocessor die stack 150. To reduce the beam angle requirements, a diestack spacing of approximately 100 mm to 200 mm may be used betweenstacked die modules. In addition, the height of the memory die stackmodules relative to the processor die stack may be adjusted by formingTSV spacers below each memory die stack module to raise the memory diestacks and improve beam angle to the processor die.

An approach for achieving precise alignment for point-to-point opticalcommunication signals is to use deflectable MEMS optical waveguidebeams. While optical MEMS devices have been used to provide movingwaveguides, such devices typically use a single continuous electrodealongside the waveguide beam to provide one-dimensional control overmovement, and often use external mirror to deflect the optical signal.To overcome limitations associated with such conventional approaches,there is disclosed herein an optical MEMS waveguide beam with multipledeflection electrodes to provide two-dimensional deflection foralignment of point-to-point optical interconnects. In particular and asillustrated in FIG. 6, there is shown an enlarged perspective view of aMEMS optical beam waveguide (e.g., 190) at a die edge (e.g., atprocessor die 151).

As shown in the enlarged view of FIG. 6, the die edge optical MEMSwaveguide beam 190 is formed in a die edge cavity 198 with a waveguidebeam structure which includes an optical beam structure 193 surroundedby an encapsulating waveguide structure 194. As formed, theencapsulating waveguide structure 194 encloses the sides of the opticalbeam structure 193 to limit dispersion of light therefrom, therebyguiding any modulated light signals along the path of the optical beamstructure 193. To provide two-dimensional deflection control foraligning point-to-point optical interconnects, the MEMS waveguide beam190 includes multiple deflection electrodes 195-197 so that differentvoltages can be applied to the deflection electrodes 195-197. Forexample, a first plurality of separate electrodes 195 are formed on afirst side of the MEMS waveguide beam structure 193, 194 in order toexert lateral deflection force thereon. In addition, a second pluralityof separate electrodes 196 may be formed on an opposite side of the MEMSwaveguide beam structure 193, 194 for exerting additional lateraldeflection force on the waveguide beam. To provide a vertical deflectionforce, a plurality of separate electrodes 197 are formed above the MEMSwaveguide beam structure 193, 194, and if desired, and if desired, oneor more additional electrodes (not shown) may be formed below the MEMSwaveguide beam structure 193, 194. By using separate electrodes 195-197alongside the enclosed optical MEMS waveguide beam 190 that may beindependently controlled, two-dimensional alignment control may beprovided in both x (lateral) and y (vertical) directions to provide finesteering control for aligning optical communication signals. As will beappreciated, the electrical conductors necessary to operate the separateelectrodes 195-197 are not shown in FIG. 6, and have been omitted fromthe drawing in order to minimize visual complexity.

In selected embodiments, separate electrodes may be along the sides ofthe beam allows different voltages to be applied at different pointsalong the beam. In this way, different electrode-induced deflectionforces can be applied along the length of the MEMS waveguide beamstructure 193, 194 to increase or decrease the deflection force appliedto different sections thereof. For example, by increasing the deflectionvoltages along the length of the MEMS waveguide beam structure, theamount of deflection increases along its length. However, to reduce therisk of stress fractures at the base of the MEMS waveguide beamstructure, the deflection voltages applied to at least a first electrodeat the base of the MEMS waveguide beam structure may have oppositepolarity to the deflection voltages applied to the electrodes at the endof the MEMS waveguide beam structure, thereby reducing the deflectionstress at the base.

By integrating a MEMS beam with optical waveguide and two-dimensionaldeflection control, a high performance packaging arrangement is providedwhich uses separate electrodes along the sides of an enclosed opticalbeam to limit dispersion of light from within the beam and to providealignment control that may be used to provide optical communicationbetween die stacks in a plurality of communication subsystems. Anexample of such a packaging arrangement is illustrated in FIG. 7 whichshows a perspective view of a plurality of side-by-side die stacksystems 213-222 with optical interconnects for attachment to a systemboard 201 to illustrate how point-to-point optical communications can beused to communicate between individual die in the plurality ofside-by-side die stack systems. In a first subsystem 213-217, a centralprocessor die stack 215 and a plurality of memory die stacks 213-214,216-217 (positioned on opposite sides of the central processor die stack215) are oriented and aligned to make electrical connection with thecontact pads 203-207 on the system board 201 using a correspondingplurality of thermoelectric conductor arrays (not shown). In addition, asecond subsystem 218-222 includes a central processor die stack 220 anda plurality of memory die stacks 218-219, 221-222 which are oriented andaligned to make electrical connection with the contact pads 208-212 onthe system board 201 using a corresponding plurality of thermoelectricconductor arrays (not shown). Of course, it will be appreciated that thedie stack systems 213-222 are not limited to processor or memory diestack implementations, and may be formed with any desired die for otheruses, so there may be other embodiments with other uses for thestructures described herein. Processing details for the fabrication,assembly, and attachment of the individual processor and memory diestacks 213-222 may proceed substantially as set forth above, andtherefore will not be repeated here, other than to note that anysuitable die attachment mechanism and thermoelectric conductorconnections (e.g., solder ball or flip-chip connections) may be used toattach and electrically connect the die stacks 213-222 throughconductors (not shown) in the system board 201 to connection pads 202for electrical connection to external systems.

To enable optical communication, the die stacks in the first subsystem(e.g., 213-217) include a plurality of optical die edge MEMS waveguidebeams 231-234 having two-dimensional alignment control to provide thecentral processor die stack (e.g., 215) with optical die-to-diecommunication with or through adjacent memory die stacks (e.g., 213-214,216-217). Likewise, the die stacks in the second subsystem (e.g.,218-222) include a plurality of optical die edge MEMS waveguide beams235-238 having two-dimensional alignment control to provide the centralprocessor die stack 220 with optical die-to-die communication with orthrough adjacent memory die stacks 218-219, 221-222. (If any additionalmemory die stacks are included in either subsystem, the memory diestacks 217-218 are shown as having optical die edge MEMS waveguide beams240, 241.) Finally, optical communication between subsystems is providedby including a plurality of optical die edge MEMS waveguide beams 239 ateach processor die stack 215, 220 to enable two-dimensional alignmentcontrol for optical die-to-die communication therebetween.

To illustrate an example fabrication sequence for forming integratedcircuit optical MEMS waveguide beams, reference is now made to FIGS.8-17 which illustrate partial plan and cutaway side views of variousstages in the production of a MEMS optical beam waveguide with fullcoverage of the sides of the waveguide and two-dimensional motioncontrol from separate sets of x and y direction electrodes positionedaround the MEMS optical beam waveguide that may be independentlycontrolled. In the embodiments shown in FIGS. 8-17, the optical beamwaveguide is completely encapsulated by a waveguide material that doesnot include any metallization along the sides of the optical beamwaveguide, though in other embodiments, a metallization layer may beadded to one or more sides of the optical beam waveguide.

Referring first to FIG. 8, there is shown a partial cutaway side view ofa semiconductor wafer structure formed as a starting stack with aplurality of substrate layers 301-306. In selected embodiments, thewafer structure includes a bulk silicon substrate 301 formed withmonocrystalline silicon, though other materials may be used for thesubstrate layer 301. On the substrate layer 301, a thin oxide layer orpad oxide layer 302 may be formed by depositing or thermally growingsilicon oxide to a predetermined thickness (e.g., approximately 1-50nm), though other materials and thicknesses could be used, such as whenthe pad oxide layer 302 is used to prevent silicidation of the substrate301 surface if desired during the later formation steps. On the oxidelayer 302, a silicon nitride layer 303 and oxide layer 304 aresequentially formed on the wafer structure. In selected embodiments, thenitride layer 303 is deposited by a chemical vapor deposition (CVD) orthermal deposition process to a predetermined thickness (e.g., 1000 nmor other suitable thickness for forming the cavity during laterformation steps) which is controlled to define part of the subsequentlyformed waveguide beam cavity. In addition, the oxide layer 304 may beformed by depositing silicon oxide or another appropriate dielectricmaterial to a predetermined thickness (e.g., 1000 nm or other suitablethickness for encapsulating the waveguide) using a CVD or thermaldeposition process, alone or in combination with a planarization orpolish step. On the oxide layer 304, a silicon substrate layer 305 andoxide layer 306 are sequentially formed. In selected embodiments, thesilicon substrate layer 305 may be formed by epitaxially growingmonocrystalline silicon or depositing polysilicon using any desired CVDor thermal deposition process to a predetermined thickness (e.g., 1000nm or other suitable thickness for forming the waveguide) which iscontrolled to define the subsequently formed optical beam structure. Incertain embodiments, the polysilicon is annealed to form large silicongrains. In addition, the oxide layer 306 may be formed by depositingsilicon oxide or another appropriate dielectric material to apredetermined thickness (e.g., 1000 nm or other suitable thickness forencapsulating the waveguide) using a CVD or thermal deposition process,alone or in combination with a planarization or polish step. As will beappreciated, the starting stack of substrate layers 301-306 may beformed as a semiconductor-on-insulator (SOI) substrate wafer structurein which the silicon substrate layer 305 and underlying substrate layer301 are bonded together to include a buried oxide layer formed with theoxide layer 304.

FIG. 9 illustrates processing of the semiconductor wafer structuresubsequent to FIG. 8 with a partial plan view after portions of thelayers 305-306 have been patterned and etched to form a patternedpartial waveguide beam structure 307 to selectively expose the oxidelayer 304 with a plurality of etched openings 308-313. Along selectedcross sections (e.g., line a-a′), the dimensions of the different etchopenings 308-313 may be controlled to define left and right electrodestructures 305E and a central waveguide beam structure 305B (as shown inFIG. 10) with the relatively narrow outer openings 308, 311 andrelatively wider inner openings 309, 310. At other cross sections (e.g.,line b-b′), the dimensions of the different etch openings 308-313 may becontrolled to define only the central waveguide beam structure 305B withthe openings 312, 313 (as shown in FIG. 10). While any desired patternand etch process may be used, the etched openings 308-313 may be formedby forming a photoresist mask or other masking material (not shown) thatis patterned, developed, and etched using appropriate anisotropic etchchemistries to protect the top oxide layer 306 and expose the underlyingoxide layer 304 where the openings 308-313 are formed. As shown in FIG.10 with the partial cutaway side view of the semiconductor waferstructure along section a-a′, the openings 308-311 define the siliconlayer 305 to include left and right electrode structures 305E positionedon opposite sides of a central waveguide beam structure 305B. However,in selected embodiments, the left and right electrode structures 305E donot run along the entire length of the central waveguide beam structure305B, but instead may be divided into separate electrodes, as shown inFIG. 10 with the partial cutaway side view of the semiconductor waferstructure along section view b-b′ in which the openings 312-313 definethe silicon layer 305 to include a central waveguide beam structure 305Bwithout left and right electrode structures.

FIG. 11 illustrates processing of the semiconductor wafer structuresubsequent to FIG. 10 with the partial cutaway side views a-a′, b-b′after an oxide layer 314 is formed in the recess openings 308-313. Inselected embodiments, the oxide layer 314 may be formed by depositing asilicon dioxide layer over the wafer structure and then subsequentlyplanarizing or polishing the wafer structure. While any desired materialand thickness can be used for the deposited dielectric layer 314, itwill be appreciated the material and thickness should be selected whichprovides a waveguide function to protect against dispersion of lightfrom the central waveguide beam structure 305B.

FIG. 12 illustrates processing of the semiconductor wafer structuresubsequent to FIG. 11 with the partial cutaway side views a-a′, b-b′after portions of the layers 304, 314 have been patterned and etched toform patterned openings 315, 316 to selectively expose the underlyingnitride layer 303 without substantially etching the electrode structures305E or central waveguide beam structure 305B. While any desired patternand etch process may be used, the etched openings 315-316 may be formedwith a photoresist mask or other masking material (not shown) that ispatterned, developed, and etched using appropriate anisotropic etchchemistries to protect the top oxide layer 314 and expose the underlyingnitride layer 303. In particular, the etched openings 315-316 expose theinterior side surfaces of the left and right electrode structures 305E(where present), and create an opening down to the underlying nitridelayer 303 for the subsequently formed waveguide beam cavity. In theetched openings 315-316, a silicon nitride layer 317 is formed to coverthe wafer structure, such as by using a nitride CVD or thermaldeposition process. At this point, the central waveguide beam structure305B is completely surrounded by oxide, and the waveguide beam cavity isfilled with nitride. After filling the etched openings 315-316 to coverthe wafer structure with nitride, the nitride layer 317 may be polishedor planarized with a suitable nitride polish process.

FIG. 13 illustrates a partial plan view of the processing of thesemiconductor wafer structure subsequent to FIG. 12 after the nitridelayer 317 is patterned and removed from areas outside the optical beamwaveguide area, and a plurality of top electrode structures 318-320 arethen formed over the optical beam waveguide area with a suitableconductive material. The nitride layer 317 may be patterned using anydesired pattern and etch process to protect the optical beam waveguidearea and otherwise remove the nitride layer 317. While any desiredelectrode formation process may be used, the top electrode structures318-320 may be formed by depositing a conductive layer (e.g.,polysilicon or metal or some combination thereof), and then patterning aphotoresist mask or other masking material (not shown) to selectivelyetch the conductive layer to define the top electrode structures 318-320over the top oxide layer 314 and top nitride layer 317. In selectedembodiments, the positioning of the top electrode structures 318-320 andelectrode structures 305E may be staggered or interleaved in anon-overlapping arrangement. This is shown in FIG. 14 with the partialcutaway side view of the semiconductor wafer structure along sectionview a-a′, where the top electrode structures are not formed over theleft and right electrode structures 305E. In contrast, FIG. 14's partialcutaway side view of the semiconductor wafer structure along sectionview b-b′ shows that the top electrode structure (e.g., 318) is formedover the central waveguide beam structure 305B in regions where the leftand right electrode structures 305E are not formed. In otherembodiments, the top and lateral electrode structures need not beinterleaved.

FIG. 15 illustrates processing of the semiconductor wafer structuresubsequent to FIG. 14 with a partial plan view after portions of thenitride layers 303, 317 are at least partially etched or removed to formopenings 321, 322 between the previously etched dielectric layers 304,314 and electrode structures 305E to expose the underling pad oxidelayer 302. At a minimum, the entirety of the nitride layers 303, 317surrounding the central waveguide beam structure 305B is removed toprovide a deflection cavity 321, 322. Any desired etchant process may beused that is capable of selectively removing the nitride layers 303, 317from the wafer structure in a controlled way. For example, the nitridelayers 303, 317 may be etched down to the pad oxide layer 302,preferably by using a wet etch chemistry (e.g., phosphoric acid) that isselective to the exposed dielectric material layers 302, 304, 314 andany exposed silicon layers 305. However, it will be appreciated thatother techniques can be used to avoid using a controlled etch process toselectively remove the nitride layers 303, 317. However accomplished,the removal of the nitride layers 303, 317 forms a waveguide beam cavityaround the central waveguide beam structure 305B and exposes anyadjacent electrode structures 305E. This is shown in FIG. 16 with thepartial cutaway side view of the semiconductor wafer structure alongsection views a-a′, b-b′ after portions of the nitride layers 303, 317have been removed to form cavity openings 321, 322 on opposite sides ofthe central waveguide beam structure 305B which also expose theelectrode structures 305E (where present).

FIG. 17 illustrates processing of the semiconductor wafer structuresubsequent to FIG. 16 with the partial cutaway side views a-a′, b-b′after silicide layers 323-324, 326-327 are formed on at least the topelectrode structures 318-320 and any exposed electrode structures 305E.Since the optical beam waveguide is formed with a cantilevered siliconbeam 328 that is encapsulated with oxide waveguide layers 304, 314,there is no silicide formed on the optical beam waveguide structure. Ifdesired, one or more bottom gate electrode structures 325 may also beformed below the central waveguide beam structure 305B by (selectively)removing the thin pad oxide layer 302 by applying a suitable etchchemistry in the waveguide beam cavity prior to silicide formation. Forexample, a light oxide etch process (e.g., CHF₃, C₂F₆, or C₄F₈ and argongas) may be applied to remove the exposed thin pad oxide layer 302.After the oxide etch, the exposed portions of the top electrodestructures 318-320, electrode structures 305E, and silicon substrate 301are silicified to form silicide layers 323-327 using a suitable material(e.g., tungsten), alone or in combination with a barrier layer (e.g.,titanium, tantalum, or nitrides thereof). This resulting silicideelectrodes are shown in FIG. 17 with the partial cutaway side view ofthe semiconductor wafer structure along section views a-a′, b-b′ inwhich the top electrode structure 318 includes silicide layers 326, 327and the electrode structures 305E include silicide layers 323-324. Inaddition, the bottom electrode(s) may be formed with the bottomelectrode silicide layer 325.

Though the bottom gate electrode structure 325 is shown as being asingle electrode, additional patterning steps could be used during theformation of the initial stack to define different layers of oxide andnitride and/or silicon so that the removal of the thin pad oxide layer302 exposes a plurality of silicon regions in the substrate 301 that areseparated by nitride and/or oxide regions. For example, the substrate301 could be covered with oxide layers having different thicknesses,including a thin oxide layer (where the bottom electrode is to beformed) and a thicker oxide layer (where the bottom electrode will notbe formed). In other embodiments, the separate bottom gate electrodesmay be formed by selectively doping the intended bottom electroderegions in the silicon substrate 301 prior to stack formation instead offorming silicide layers 325. Alternatively, shallow trench isolation(STI) regions could be formed in the silicon substrate 301 prior tostack formation to leave silicon regions in the substrate 310 only wherethe intended bottom electrode regions are located. While theseadditional processing steps add an extra overlay step to ensure that thewaveguides are formed correctly over the future bottom electrodes, thegeometries are sufficiently large that this should not be a problem.

As described herein, the lateral deflection of the MEMS optical beamwaveguide 328, 304, 314 is caused by the electric fields that resultfrom the application of the deflection bias voltages to the cantileveredsilicon beam 328 and one or more of the lateral deflection electrodes305E/323, 305E/324 which laterally push or pull the cantilevered siliconbeam 328, depending on the polarity of the applied lateral deflectionbias voltages. In similar fashion, vertical deflection of the MEMSoptical beam waveguide 328, 304, 314 is caused by the electric fieldsthat result from the application of the deflection bias voltages to thecantilevered silicon beam 328 and one or more of the vertical deflectionelectrodes (e.g., top electrode structures 318-320 or bottom gateelectrode structures 325) which vertically push or pull the cantileveredsilicon beam 328, depending on the polarity of the applied verticaldeflection bias voltages. By supplying the deflectable MEMS optical beamwaveguide with a potential as a first deflection bias voltage, likedeflection bias voltages (e.g., both positive or both negative) on alateral or vertical deflection electrode and the deflectable MEMSoptical beam waveguide will repel or push the beam away from thedeflection electrode on the cavity wall with the like voltage.Conversely, opposite deflection bias voltages (e.g., opposite polarityvoltages) on a lateral or vertical deflection electrode and thedeflectable MEMS optical beam waveguide will pull or attract the beamtoward the deflection electrode on the cavity wall with the oppositepotential to that of the beam. From a circuit point of view, it isefficient to selectively supply only positive deflection bias voltagesto the deflectable MEMS optical beam waveguide and on one or moredeflection electrodes on the cavity wall(s) opposite the desireddirection(s) of deflection, though any desired bias voltage polarityscheme may be used to achieve the desired deflection control. Forexample, with selected multi-electrode embodiments, a negativedeflection bias voltage may be applied to a deflection electrode on oneside opposite the direction of desired deflection and nearest the baseof a positively charged deflectable MEMS optical beam waveguide toreduce the stress that would otherwise be concentrated near the base ofthe deflectable MEMS optical beam waveguides (by creating a force in theopposite direction to the forces deflecting the beam), therebydistributing the deflection stress more evenly along the beam. In otherembodiments, the shape of the deflected beam could be closely controlledby using combinations of positive and negative deflection bias voltageson the deflection electrodes on the same cavity wall. In yet otherembodiments, the deflection electrodes on opposite sides of the cavitycould be selectively biased so that deflection electrodes on one side ofthe cavity are biased to attract, while deflection electrodes on theother side of the cavity are biased to repel. This technique could beused to reduce the maximum deflection bias voltage necessary to deflectthe beam to address situations the maximum deflection bias voltage isnear or above the breakdown voltage of the transistors of electrodevoltage generation circuit.

As will be appreciated, the various processing steps used in thefabrication sequence for forming integrated circuit optical MEMSwaveguide beams may be performed separately or concurrently with otherprocessing steps used to form other structures in the integrated circuitdie. For example, the electrode silicide layer 325 may be formed withsilicide formation processing steps that are separate from silicideformation of transistor gate or contact regions. Alternatively, theelectrode suicide layer 325 and silicided transistor gate or contactregions may be formed with the same suicide formation processing steps.

To illustrate another example fabrication sequence for formingintegrated circuit optical MEMS waveguide beams, reference is now madeto FIGS. 18-23 which illustrate partial plan and cutaway side views ofvarious stages in the production of a MEMS optical beam waveguide formedwith a semiconductor (e.g., silicon, silicon germanium, etc.) beamstructure having top and side metallization electrodes and fullwaveguide encapsulation and including separate sets of x and y directionelectrodes positioned around the MEMS optical beam waveguide that may beindependently controlled to provide two-dimensional motion control.Generally speaking, FIGS. 18-23 illustrate processing of the waferstructure subsequent to FIG. 11. Accordingly and for purposes ofconsistency, the wafer structure features 301-314 from FIG. 11 have beenre-labeled as wafer structure features 401-414, respectively, in FIGS.18-23. However, there is one difference to note concerning the waferstructure processing shown in FIGS. 18-23, which relates to thepatterning of the silicon substrate layer 405. In particular, therelatively wider inner openings 309, 310 (shown in FIGS. 9-10) areinstead formed with narrower inner openings 409, 410, therebyeffectively maintaining the width of the central waveguide beamstructure 405B while lengthening the portions 411, 412 of thesemiconductor layer 405 that form the lateral electrodes in the finaldevice as described below.

Referring first to FIG. 18, there shown a partial plan view of theprocessing of the semiconductor wafer structure subsequent to FIG. 11after a plurality of top electrode (TE) structures 415-417 are formed inthe top oxide layer 414 and over the silicon waveguide beam structure405B. While any desired electrode formation process may be used, the topelectrode structures 415-417 may be formed by selectively etching aplurality of etch openings in the top oxide layer 414, such as bypatterning a photoresist mask or other masking material (not shown) toselectively etch openings in the top oxide layer 414. Subsequently, aconductive layer, such as polysilicon or metal (e.g., tungsten) or somecombination thereof is deposited to fill the etch openings, followed bya planarization or CMP polish step to define the top electrodestructures 415-417 over the top oxide layer 414 at specified locationsover the central waveguide beam structure 405B. In selected embodiments,the positioning of the top electrode structures 415-417 andfinally-formed lateral electrode structures may be staggered orinterleaved in a non-overlapping arrangement. This is shown in FIG. 19with the partial cutaway side view of the semiconductor wafer structurealong section views a-a′, b-b′ after formation of top electrodestructures 415-417 so as to be interleaved with the relative position ofthe finally-formed lateral electrode structures as described below. FIG.19 also shows that the inner openings 409, 410 used to pattern anddefine the semiconductor layer 405 result in relatively wider etchedsemiconductor layer features 411, 412 that are used to form the lateralelectrodes the final device. Of course, it will be appreciated that thetop and lateral electrode structures need not be interleaved as shown inFIGS. 18-19.

FIG. 20 illustrates processing of the semiconductor wafer structuresubsequent to FIG. 19 with the partial cutaway side views b-b′ afterportions of the layers 411, 412, 414, 404 have been patterned and etchedto form patterned openings 418, 419 on opposite sides of the centralwaveguide beam structure 405B to selectively expose the underlyingnitride layer 403. While any desired pattern and etch process may beused, the etched openings 418-419 may be formed with a photoresist maskor other masking material (not shown) that is patterned, developed, andetched using appropriate anisotropic etch chemistries to protect the topoxide layer 414 and expose the underlying nitride layer 403. Inparticular, the positioning of the etched openings 418-419 is controlledto divide or separate each of the wider etched semiconductor layerfeatures 411, 412 (where present) into separate semiconductor electrodefeatures E1, E2, E3, E4 as shown, and to create an opening down to theunderlying nitride layer 403 for the subsequently formed waveguide beamcavity. In the etched openings 418-419, a silicon nitride layer 420 isformed to cover the wafer structure, such as by using a nitride CVD orthermal deposition process. At this point, the central waveguide beamstructure 405B, top electrode structure 415-417, and semiconductorelectrode features E2, E3 are completely surrounded by nitride, and thewaveguide beam cavity is filled with nitride. After filling the etchedopenings 418-419 to cover the wafer structure with nitride, the nitridelayer 420 may be polished or planarized with a suitable nitride polishprocess.

FIG. 21 illustrates processing of the semiconductor wafer structuresubsequent to FIG. 20 with a partial cutaway side view after a pluralityof top electrode structures (e.g., 421) are formed with a suitableconductive material. While any desired electrode formation process maybe used, the top electrode structure(s) 421 may be formed by depositinga conductive layer (e.g., polysilicon or metal or some combinationthereof), and then patterning a photoresist mask or other maskingmaterial (not shown) to selectively etch the conductive layer to defineone or more top electrode structures 421 over the top oxide layer 414and top nitride layer 420. In selected embodiments, the positioning ofthe top electrode structure(s) 421 is aligned with the top electrodestructure 415-417 and staggered or interleaved with the semiconductorelectrode features E2, E3 in a non-overlapping arrangement in order tomaximize vertical deflection forces between the top gate electrodes 415,421. This is shown in FIG. 21 with the partial cutaway side view of thesemiconductor wafer structure along section view a-a′, where the topelectrode structures are not formed over the semiconductor electrodefeatures E1, E2, E3, E4. In contrast, FIG. 21's partial cutaway sideview of the semiconductor wafer structure along section view b-b′ showsthat the top gate electrodes 415, 421 are formed over the centralwaveguide beam structure 405B in regions where the semiconductorelectrode features E1, E2, E3, E4 are not formed. In other embodiments,the top and lateral electrode structures need not be interleaved.

FIG. 22 illustrates processing of the semiconductor wafer structuresubsequent to FIG. 21 with a partial cutaway side view after portions ofthe nitride layers 403, 420 are at least partially etched or removed sothat all nitride surrounding the central waveguide beam structure 405Bis removed. Any desired etchant process may be used that is capable ofselectively removing the nitride layers 403, 420 from the waferstructure in a controlled way. However accomplished, the removal of thenitride layers 403, 420 forms a waveguide beam cavity around the centralwaveguide beam structure 405B and exposes any adjacent electrodestructures E1-E4. This is shown in FIG. 22 with the partial cutaway sideview of the semiconductor wafer structure along section views a-a′, b-b′after portions of the nitride layers 403, 420 have been removed to formcavity openings 424, 425 on opposite sides of the central waveguide beamstructure 405B which also expose the electrode structures E1-E4 (wherepresent).

FIG. 23 illustrates processing of the semiconductor wafer structuresubsequent to FIG. 22 with the partial cutaway side views a-a′ aftersilicide layers 426-427, 429-430 are formed on at least the topelectrode structures 421 and any exposed electrode structures E1-E4. Ifdesired, one or more bottom gate electrode structures 428 may also beformed below the central waveguide beam structure 405B by (selectively)removing the thin pad oxide layer 402 by applying a suitable etchchemistry in the waveguide beam cavity prior to silicide formation.After the oxide etch, the exposed portions of the top electrodestructures 421, electrode structures E1-E4, and silicon substrate 401are silicided to form silicide layers 426-430 using a suitable material(e.g., tungsten), alone or in combination with a barrier layer (e.g.,titanium, tantalum, or nitrides thereof). If the top gate electrode 415is formed with a metal (e.g., W), a silicide layer will not be formed,as shown in FIG. 23. This resulting silicide electrodes are shown inFIG. 23 with the partial cutaway side view of the semiconductor waferstructure along section views a-a′, b-b′ which the top electrodestructure 421 includes silicide layers 429-430 and the electrodestructures E1-E4 include silicide layers 426, 427. In addition, thebottom electrode(s) may be formed with the bottom electrode silicidelayer 428.

To illustrate another example fabrication sequence for formingintegrated circuit optical MEMS waveguide beams, reference is now madeto FIGS. 24-31 which illustrate partial plan and cutaway side views ofvarious stages in the production of a MEMS optical beam waveguide formedwith a silicon oxide (SiO₂) beam structure having top, bottom, and sidemetallization electrodes and full waveguide encapsulation and includingseparate sets of x and y direction electrodes positioned around the MEMSoptical beam waveguide that may be independently controlled to providetwo-dimensional motion control.

Referring first to FIG. 24, there is shown a partial cutaway side viewof a semiconductor wafer structure formed as a starting stack with aplurality of substrate layers 501-505. In selected embodiments, thewafer structure includes a bulk silicon substrate 501 formed withmonocrystalline silicon, though other materials may be used. On thesubstrate layer 501, a thin oxide layer or pad oxide layer 502 may beformed by depositing or thermally growing silicon oxide to apredetermined thickness (e.g., approximately 1-50 nm), though othermaterials and thicknesses could be used. On the pad oxide layer 502, asilicon nitride layer 503 and silicon substrate layer 504 aresequentially formed on the wafer structure. In selected embodiments, thenitride layer 503 is deposited by a CVD or thermal deposition process toa predetermined thickness (e.g., 1000 nm or other suitable thickness forforming the cavity during later formation steps) which is controlled todefine part of the subsequently formed waveguide beam cavity. Inaddition, the silicon substrate layer 504 may be formed by epitaxiallygrowing monocrystalline silicon or depositing polysilicon using anydesired CVD or thermal deposition process, alone or in combination witha planarization or polish step. The silicon substrate layer 504 isformed to a predetermined thickness (e.g., 1000 nm or other suitablethickness for encapsulating the waveguide) which is controlled to definethe subsequently formed encapsulating waveguide structure around thesilicon oxide optical beam structure. On the silicon substrate layer504, an oxide layer 505 is formed to a predetermined thickness (e.g.,1000 nm or other suitable thickness for forming the waveguide) using aCVD or thermal deposition process, alone or in combination with aplanarization or polish step. As will be appreciated, the starting stackof substrate layers 501-505 may be formed by bonding the siliconsubstrate layer 504 to the underlying substrate layer 501 to include thepad oxide layer 502 and nitride layer 503.

FIG. 25 illustrates processing of the semiconductor wafer structuresubsequent to FIG. 24 with partial cutaway and plan views after portionsof the layers 504-505 have been patterned and etched to form a patternedopening 506 which defines a recess in the silicon substrate layer 504where the optical beam structure will be formed. The dimensions of thepatterned opening 506 may be controlled to define the width and lengthof the optical beam structure. While any desired pattern and etchprocess may be used, the patterned opening 506 may be formed with aphotoresist mask or other masking material (not shown) that ispatterned, developed, and etched using appropriate anisotropic etchchemistries to protect the top oxide layer 505 and etch into theunderlying silicon substrate layer 504 where the patterned opening 506is formed.

FIG. 26 illustrates processing of the semiconductor wafer structuresubsequent to FIG. 25 with a partial cutaway side view after an opticalbeam structure 507 is formed in the patterned opening 506 by depositingand polishing a dielectric layer. In selected embodiments, the opticalbeam structure 507 may be formed by depositing a dielectric layer (e.g.,SiO₂) over the wafer structure and then subsequently planarizing orpolishing the wafer structure down to the silicon substrate layer 504.While silicon oxide can be used to form the optical beam structure 507,any desired material can be used that provides suitable lighttransmission properties for the optical signal transmission.

FIG. 27 illustrates processing of the semiconductor wafer structuresubsequent to FIG. 26 with a partial cutaway side view after anadditional silicon waveguide layer 508 and thin oxide layer or pad oxidelayer 509 are sequentially formed. In selected embodiments, the siliconsubstrate layer 508 may be forded by epitaxially growing monocrystallinesilicon or depositing polysilicon on top of the polished siliconsubstrate layer 504 using any desired deposition or growth process to apredetermined thickness (e.g., 1000 nm or other suitable thickness forencapsulating the waveguide) which is controlled to define thesubsequently formed encapsulating waveguide structure. If desired, thenewly formed silicon waveguide layer 508 may be polished or planarized.Subsequently, the pad oxide layer 509 may be formed by depositing orthermally growing silicon oxide to a predetermined thickness (e.g.,approximately 1-50 nm), though other materials and thicknesses could beused. As will be appreciated, the pad oxide layer 509 provides a goodadhesion surface for the subsequently formed nitride layer 512.

FIG. 28 illustrates processing of the semiconductor wafer structuresubsequent to FIG. 27 with a partial cutaway side view after portions ofthe layers 508, 509 have been patterned and etched to form patternedopenings 510, 511 to selectively expose the underlying nitride layer 503to thereby define the optical beam structure 507 surrounded by anencapsulating silicon waveguide structure 508W. The location anddimensions of the etch openings 510, 511 may be controlled to defineleft and right electrode structures 508E and a central encapsulatingoxide waveguide structure 508W. While any desired pattern and etchprocess may be used, the etched openings 510, 511 may be formed with aphotoresist mask or other masking material (not shown) that ispatterned, developed, and etched using appropriate anisotropic etchchemistries to protect the layers 508, 509 and expose the underlyingnitride layer 503 where desired. In particular, the etched openings 510,511 create an opening down to the underlying nitride layer 503 for thesubsequently formed waveguide beam cavity. In the etched openings 510,511 and over the etched silicon structures 508E, 508W, a silicon nitridelayer 512 is formed to cover the wafer structure, such as by using anitride CVD or thermal nitride process. At this point, the encapsulatingsilicon waveguide structure 508W surrounding the central waveguide beamstructure 507 is completely surrounded by nitride layers 503, 512,thereby filling the waveguide beam cavity with nitride. After fillingthe etched openings 510, 511 to cover the wafer structure with nitride,the nitride layer 512 may be polished or planarized with a suitablenitride polish process. In other embodiments, the exposed sidewalls ofthe etched silicon structures 508E, 508W in the etched openings 510, 511may be oxidize or coated with oxide prior to filling the openings withnitride.

FIG. 29 illustrates a partial plan view of the processing of thesemiconductor wafer structure subsequent to FIG. 28 after the removingthe nitride layer 512 from areas outside the optical beam waveguidearea, and then forming one or more top electrode structures 513 over theoptical beam waveguide area with a suitable conductive material. As willbe appreciated, the nitride layer 512 may be selectively removed usingany desired pattern and etch process to protect the optical beamwaveguide area and otherwise remove the nitride layer 512. As for thetop electrode structure(s) 513, any desired electrode formation processmay be used, such as depositing a conductive layer (e.g., polysilicon ormetal or some combination thereof), and then patterning a photoresistmask or other masking material (not shown) to selectively etch theconductive layer to define the top electrode structure(s) 513 over thepad oxide layer 509 and top nitride layer 512. In selected embodiments,the positioning of the top electrode structure(s) 513 and electrodestructures 508E may be staggered or interleaved in a non-overlappingarrangement. In other embodiments, the top and lateral electrodestructures need not be interleaved.

FIG. 30 illustrates processing of the semiconductor wafer structuresubsequent to FIG. 29 with partial cutaway and plan views after portionsof the nitride layers 503, 512 are at least partially etched or removed,though the entirety of the nitride layers 503, 512 surrounding theencapsulating waveguide structure 508W is removed. Any desired etchantprocess may be used that is capable of selectively removing the nitridelayers 503, 512 from the wafer structure in a controlled way. Forexample, the nitride layers 503, 512 may be etched down to the pad oxidelayer 502, preferably by using a wet etch chemistry (e.g., phosphoricacid) that is selective to the exposed dielectric material layers 502,509 and any exposed silicon layers 508. However, it will be appreciatedthat other techniques can be used to avoid using a controlled etchprocess to selectively remove the nitride layers 503, 512. Howeveraccomplished, the removal of the nitride layers 503, 512 forms awaveguide beam cavity around the encapsulating silicon waveguidestructure 508W and exposes any adjacent electrode structures 508E. Inselected embodiments, an additional oxide etch process may be applied toremove the pad oxide layer 502 from the bottom of the waveguide beamcavity. This is shown in FIG. 30 with the partial cutaway side view ofthe semiconductor wafer structure after portions of the nitride layers503, 512 and pad oxide layer 502 have been removed to form cavityopenings 516, 517 on opposite sides of the encapsulating waveguidestructure 508W which also expose the electrode structures 508E (wherepresent). In addition, the plan view of FIG. 30 shows that the cavityopenings 516, 517 expose the underlying silicon substrate layer 501.

FIG. 31 illustrates processing of the semiconductor wafer structuresubsequent to FIG. 30 with the partial cutaway side view after silicidelayers 520-521, 523-524 are formed on at least the top electrodestructures 513-515 and any exposed electrode structures 508E using asilicide formation process. If desired, one or more bottom gateelectrode structures 522 may also be formed below the central waveguidebeam structure 508W during silicide formation. For example, the exposedportions of the top electrode structures 513-515, encapsulatingwaveguide structure 508W, side electrode structures 508E, and siliconsubstrate 501 may be silicided to form silicide layers 520-524 using asuitable material (e.g., tungsten), alone or in combination with abarrier layer (e.g., titanium, tantalum, or nitrides thereof). Thisresulting suicide electrodes are shown in FIG. 31 with the partialcutaway side view of the semiconductor wafer structure in which the topelectrode structure 513 includes suicide layers 523-524, theencapsulating silicon waveguide structure 508W includes suicide layers520, and the electrode structures 508W include silicide layers 521. Inaddition, the bottom electrode(s) may be formed with the bottomelectrode silicide layer 522.

By providing a MEMS optical beam waveguide with multiple deflectionelectrodes positioned on and around the length of the waveguide, eachdeflection electrode may be connected to a separate bias voltage toprovide different amounts of deflection along the optical beam path. Inselected embodiments, larger voltages may be applied to deflectionelectrodes that are located further from the connection of the opticalbeam waveguide to the supporting substrate, thereby increasing thedeflection along the beam path. An example implementation is illustratedin FIG. 32 which shows circuit diagram for a multiple electrode biasdriver 530 that generates separate deflection bias voltages for aplurality of top electrodes 318-320 in the optical MEMS waveguide beamshown in plan view in FIG. 17. As illustrated, the bias driver 530 maybe digitally programmed to generate a specified voltage at the output ofa voltage driver circuit 533 by storing a digital voltage value at thecounter 531 which is an up-down counter controlled by feedback,converting the digital voltage value at the digital-to-analog converter(DAC) 532, and supplying the converted value to the voltage drivercircuit 533 which generates a drive voltage. In some embodiments thecounter 531 and the voltage driver circuit 533 may be considered to becomponents of the DAC 532. By applying generated drive voltage to amulti-tap resistor circuit 534 which has individual taps 537-539connected to different deflection electrodes 318-320, each top electrodeis biased with a different deflection voltage. For example, a first topelectrode 318 (which is located furthest from the connection of theoptical beam waveguide 328 to the supporting substrate) is connected toa first tap 539 to receive the largest deflection voltage (e.g., thedrive voltage generated by the voltage driver circuit 533). The next topelectrode 319 (which is located closer to the connection of the opticalbeam waveguide 328 to the supporting substrate) is connected to a secondtap 538 to receive a second, smaller deflection voltage (e.g., the drivevoltage generated by the voltage driver circuit 533, reduced by thefirst voltage drop across the multi-tap resistor circuit 534). The nexttop electrode 320 (which is located closest to the connection of theoptical beam waveguide 328 to the supporting substrate) is connected toa third tap 537 to receive a third, smallest deflection voltage (e.g.,the drive voltage generated by the voltage driver circuit 533, reducedby the first and second voltage drops across the multi-tap resistorcircuit 534). In this way, the deflection voltages supplied to the topelectrodes 318-320 decrease from the drive voltage generated by thevoltage driver circuit 533 (e.g., at tap 539 and electrode 318) downtoward a reference voltage (e.g., ground) at the multi-tap resistorcircuit 534. As will be appreciated, the bias driver 530 may supplydifferent deflection bias voltages by including additional taps (e.g.,535-536) in the multi-tap resistor circuit 534 which are connected asrequired to the plurality of top electrodes 318-320. Indeed, dependingon how each tap 535-539 is connected to the different deflectionelectrodes 318-320, each electrode may be provided any desireddeflection bias voltage.

As will be appreciated, other deflection bias voltage generators may beused to separately control the different deflection electrodespositioned on and around the length of the waveguide driver. The abilityto separately control the applied deflection bias voltages can reducethe risk of stress fractures at the base of the MEMS waveguide beamstructure by applying deflection voltages to at least a first electrodeat the base of the MEMS waveguide beam structure having the oppositepolarity to the deflection voltages applied to the electrodes at the endof the MEMS waveguide beam structure. Referring now to FIG. 33, there isillustrated an example circuit diagram for a shared bias driver 540 thatgenerates separate deflection bias voltages for vertical and lateraldeflection electrodes positioned around one or more optical MEMSwaveguide beams.

The depicted shared bias driver circuit 540 may be used to controlmultiple MEMS waveguide beam structures to program compensation for abeam offset resulting from stresses induced during manufacturing. Inoperation, the bias driver 540 may be digitally programmed to generate aplurality of specified deflection voltages at nodes 561-564 which arecoupled to top and side deflection electrodes not shown). For example,the bias driver 540 generates a first lateral or X-deflection voltage atcharging capacitor 551 for a first MEMS optical beam waveguide (Beam A)at a first node 561, and generates a second lateral or X-deflectionvoltage at charging capacitor 553 for a second MEMS waveguide beam (BeamB) at a second node 563. In addition, the bias driver 540 generates afirst vertical or Y-deflection voltage at charging capacitor 552 for thefirst MEMS waveguide beam (Beam A) at a third node 562, and a secondvertical or Y-deflection voltage at charging capacitor 554 for thesecond MEMS waveguide beam (Beam B) at a fourth node 564, and so on.

To generate the lateral or X-deflection voltages, the shared bias drivercircuit 510 includes a plurality of digital counters or registers forstoring lateral digital voltage values. For example, a first lateraldigital voltage value (Ax) for the first MEMS waveguide beam is storedat register/counter 541 by control logic 545, and a second lateraldigital voltage value (Bx) for the second MEMS optical beam waveguide isstored at register/counter 543 by control logic 545. With the applicablecontrol logic 545, the stored lateral digital voltage values fromregisters 541, 543 are converted at DAC circuit 546 to first and secondlateral or X-deflection voltages, respectively, which are supplied bycontrol switch 549 to first and second nodes 561, 563. Though not shown,the first lateral or X-deflection voltage at node 561 may be supplied tolateral deflection electrodes at a first MEMS optical waveguide beam(Beam A) and the second lateral or X-deflection voltage at node 563 maybe supplied to lateral deflection electrodes at a second MEMS opticalwaveguide beam (Beam B).

In similar fashion, the shared bias driver circuit 540 generates thevertical or Y-deflection voltages from vertical digital voltage valuesthat are stored in a plurality of digital counters or registers. Forexample, a first vertical digital voltage value (Ay) for the first MEMSoptical beam waveguide is stored at register/counter 542 by controllogic 547, and a second vertical digital voltage value (By) for thesecond MEMS optical beam waveguide is stored at register/counter 544 bycontrol logic 547. With the applicable control logic 547, the storedlateral digital voltage values from registers 542, 544 are converted atDAC circuit 548 to first and second vertical or Y-deflection voltages,respectively, which are supplied by control switch 550 to third andfourth nodes 562, 564. Though not shown, the first vertical orY-deflection voltage at node 562 may be supplied to a top (and/orbottom) deflection electrode at a MEMS optical beam waveguide (Beam A),and the second vertical or Y-deflection voltage at node 564 may besupplied to a top (and/or bottom) deflection electrode at a second MEMSoptical beam waveguide (Beam B).

By generating different vertical and lateral deflection voltages fromdigital voltage values stored in dedicated control registers 541-544using control logic in a shared circuit arrangement 540, each of theseparate top and side electrodes may be separately biased with anyarbitrary deflection voltage. In this way, the deflection voltagessupplied to the top and side electrodes may be increased or decreasedalong the length of the respective MEMS beam waveguide. Alternatively,the bias driver 540 may supply different deflection bias voltages toreduce the risk of stress fractures at the base of the MEMS opticalwaveguide beam structure by applying a deflection voltage to at least afirst electrode at the base of the MEMS waveguide beam structure thathas an opposite polarity to the deflection voltages applied to theelectrodes at the end of the MEMS optical beam waveguide structure.

With the shared circuit arrangement 540, such as shown in FIG. 33, thereis provided a method for generating MEMS optical beam waveform guideplate voltages at each MEMS optical waveguide beam that can beindividually applied to different deflection electrodes to providefeedback-based compensation for beam offset adjustments that arise fromstresses induced during manufacturing and/or during operation. As apreliminary step, a pair of DAC counters for a beam (e.g., Beam A) arecalibrated with initial setting values to compensate for beamdeflections in the X and Y directions resulting from manufacturingstresses or defects, thereby zeroing the beam deflection. The initialcalibration step can be performed at fabrication or during testoperations, and the resulting X and Y calibration values can be stored,such as by programming fuse values or flash memory values. Using controllogic, values representing the expected beam deflection angles, based onthe calculated relative physical location of the MEMS optical beamwaveguide coupled to the receiver in a target die in the adjacent stack,are calculated (or retrieved from memory), and then added to the storedX and Y calibration values to compute final X and Y deflection valuesthat may be stored or loaded in a pair of X and Y deflection controlregisters (e.g., 541, 542) for the MEMS optical waveguide beam. Thefinal X and Y deflection values for the beam may then be loaded from theregisters (e.g., 541, 542) into respective DAC circuits 546, 548 viacontrol logic 545, 547, where they are converted to X and Y MEMS beamplate voltages that are respectively stored on the capacitors 551, 552via control switches 549, 550. After loading the stored values forprocessing by the DAC circuit 546, 548 to generate deflection voltagesfor the X and Y deflection electrodes, the corresponding MEMS opticalbeam waveguides may be deflected to initial angles in X and Y toapproximately align to the associated receiving MEMS optical beamwaveguides in a target die in an adjacent stack. A calibration procedureto refine beam alignment may then be initiated. Since no data signal isyet available, an optical beam with a dummy signal may be passed throughthe calibrating MEMS optical beam waveguide to be received by the targetMEMS optical beam waveguide and receiver in the adjacent stack. Feedbackelectrical signals (FB) from the target MEMS optical beam waveguide andreceiver are generated based on the intensity of the received opticalbeam at the target receiver, and may then be coupled through theconnections in the die stacks (e.g., TSVs) and substrate board. Oncereceived, the feedback electrical signals (FB) can be used to by controllogic 545, 547 to more accurately adjust the alignment of thecalibrating MEMS optical beam waveguide.

Over time, the X and Y MEMS beam plate voltages may be adjusted asrequired to reflect changes in the beam alignment requirements, such asmay be introduced by vibration (e.g., dropping) or temperature changesduring use. To this end, an optical signal or an optical dummy signalmay periodically be communicated from a transmitting MEMS opticalwaveguide beam to a corresponding receiving MEMS optical beam waveguidebeam to generate feedback (FB) for the control logic 545, 547 for use in(re)calibrating the MEMS optical beam waveguide beams to achieve MEMSoptical beam waveguide alignment. In response to the feedback signal,the control logic 545, 547 adjusts the DAC counter values and/orotherwise updates the values stored in the pair of X and Y deflectioncontrol registers (e.g., 541, 542) for the beam. In this way, thecontrol logic 545, 547 can retrieve and use the adjusted final X and Ydeflection values from the X and Y deflection control registers duringthe next beam alignment/capacitor restore cycle.

As described hereinabove, there is provided an improved MEMS opticalbeam waveguides with enclosed sides to limit light dispersion and withtwo-dimensional alignment and controlled feedback to adjust beamalignment to make the integration of the die-to-die opticalcommunication easier. While the MEMs optical beam waveguides andsurrounding electrode structures may be used in a controlled feedbacksystem as part of an information handling system, it will be appreciatedthat the controllable optical beam waveguides may be used with anyembodiments where controlled movement of an optical beam waveguide isdesired, such as sensor communication systems, automotive sensor andcontrol systems, etc. A first example application is illustrated in FIG.34 which shows how MEMS optical beams with two-dimensional beamalignment can be used in a stacked die assembly to communicate betweentwo die without external deflection. It should be understood that that,in some embodiments using bidirectional communications over an opticallink between two die, there is a MEMS optical waveguide beam at each endof the link so that a transmitting beam is aligned to a target MEMSoptical beam waveguide beam and receiver in both directions. In theseembodiments, the link alignment includes beams at both ends of the linkto be aligned as described above. For unidirectional communications,aligning the receiving MEMS optical waveguide beam presents a receivingwaveguide face perpendicular to the beam reducing beam dispersion.

Reference is now made to FIG. 34 which shows transmitting and receivingMEMS optical beam waveguide beam in adjacent die stacks and the opticalsignals communicated between them. On the left, two stacked die 601, 611each include a light or laser source (L) for generating an unmodulatedoptical beam, and a modulator (M) for generating a modulated light beamfor transmission through the respective MEMS optical beam waveguide 602,612. In addition, each of the stacked die 601, 611 includes an MEMSoptical beam waveguide 602, 612 which may be deflected within a cavity603, 613 by application of one or more deflection bias voltages to thedeflection electrodes 605, 615 positioned around each cavity 603, 613.Each of the stacked die 601, 611 may include one or more additionaldeflection electrodes 604, 614 which are positioned around each cavity603, 613 to provide an additional dimension of beam alignment control.In similar fashion, there are two stacked die 606, 616 on the rightwhich each include an MEMS optical beam waveguide 607, 617 which may bedeflected within a cavity 608, 618 by application of one or moredeflection bias voltages to the deflection electrodes 610, 620 and oneor more additional deflection electrodes 609, 619 positioned around eachcavity 608, 618. Each of the stacked die 606, 616 includes a receiver(R) for receiving and demodulating the optical beam signal receivedthrough the respective MEMS optical beam waveguide 607, 617.

By generating and applying the proper deflection bias voltages to theupper and lower deflection electrodes 605 u, 605 d at die 601, the MEMSoptical beam waveguide 602 is deflected within the cavity 603 to pointdown toward die 616, thereby directing the optical signal 621 from theMEMS optical beam waveguide 602. At the receiving die 616, theappropriate deflection bias voltages are applied to the upper and lowerdeflection electrodes 620 u, 620 d to deflect the MEMS optical beamwaveguide 617 to be aligned for reception of the optical signal 621. Inthis way, the multiple deflection electrodes 604-605, 619-620 positionedon and around the MEMS optical beam waveguides 602, 617 may be used toprovide two-dimensional deflection for aligning communications betweentwo die without external deflection along with controlled feedback toadjust beam alignment as described hereinabove.

In similar fashion, deflection bias voltages may be applied to the upperand lower deflection electrodes 615 u, 615 d at die 611 to deflect theMEMS optical beam waveguide 632 within the cavity 633 to point downtoward die 606, thereby directing the optical signal 622 from the MEMSoptical beam waveguide 612. At the receiving die 606, the appropriatedeflection bias voltages are applied to the upper and lower deflectionelectrodes 610 u, 610 d to deflect the MEMS optical beam waveguide 607to be aligned for reception of the optical signal 622. In this way, themultiple deflection electrodes 614-615, 609-610 positioned on and aroundthe MEMS optical beam waveguides 612, 607 may be used to providetwo-dimensional deflection for aligning communications between two diewithout external deflection along with controlled feedback to adjustbeam alignment. Once alignment of MEMS optical beam waveguide pairs 602,617 and 612, 607 is achieved, each MEMS optical beam waveguide iscapable of bidirectional communication. In addition to facilitatingdie-to-die signal connections, other applications are possible with theimproved MEMS optical beam waveguides disclosed herein. For example, theMEMS optical beam waveguides can be used internally within a die toprovide an optical waveguide crossover communication path as betweenpotentially conflicting structures within the optical waveguide plane.An example crossover application is illustrated in FIG. 35 which showshow MEMS optical beams with two-dimensional beam deflection can be usedto provide an optical waveguide crossover path within a die 631. Asdepicted, the die 631 includes a pair of MEMS optical beam waveguides632, 637 which, if un-deflected, would communicate optical signals thatinteract with the optical structure 641 (e.g., a laser cavity, amodulator, etc.) in the same plane (but aligned perpendicular to thepage), possibly leading to signal degradation. Instead of using fixedwaveguide/mirror arrangements (with their associated cost andcomplexity) to route the waveguides past each other, the pair of MEMSoptical beam waveguides 632, 637 are positioned around an intersectioncavity 613 having a reflection surface layer 636 to reflect the opticalsignal 642 from the MEMS optical beam waveguide 632 to the MEMS opticalbeam waveguide 637.

To accomplish crossover signal routing, the pair of MEMS optical beamwaveguides 632, 637 are disposed on opposite sides of the intersectioncavity 643 so that the MEMS optical beam waveguides 632, 637 may bedeflected within their respective cavities 633, 638 by application ofone or more deflection bias voltages to the deflection electrodes634-635, 639-640 positioned around each cavity 633, 638. By appropriatecontrol of the pattern and etch processes applied to the conductor layer(e.g., the metal 1 (M1) layer), the deflection electrodes 635 u, 640 uand reflection surface layer 636 may be formed from the same materiallayer, provided that the position and width of the reflection surfacelayer 636 are chosen to provide the required reflection of the opticalsignal 642. In operation, deflection bias voltages are applied to theupper and lower deflection electrodes 635 u, 635 d to deflect the MEMSoptical beam waveguide 632 within the cavity 633 to point up toward thereflection surface layer 636, thereby directing the optical signal 642from the MEMS optical beam waveguide 632 to be reflected back toward theMEMS optical beam waveguide 637. Likewise, appropriate deflection biasvoltages are applied to the upper and lower deflection electrodes 640 u,640 d to deflect the MEMS optical beam waveguide 637 to be aligned forreception of the reflected optical signal 642. In this way, the multipledeflection electrodes 634-635, 639-640 positioned on and around the MEMSoptical beam waveguides 632, 637 may be used to provide two-dimensionaldeflection for building an optical waveguide crossover using the sametechnology as an ordinary beam switch. To prevent signal degradationfrom optical signal interaction with the waveguide 641, the MEMS opticalbeam waveguides 632, 637 are always in a deflected position when thewaveguides are functional.

In addition to crossover signal routing, the pair of MEMS optical beamwaveguides 632, 637 may be disposed to selectively switch signals to andfrom the waveguide 641. For example, if the waveguide 641 includes adeflection mirror structure (e.g., a 15 degree mirror forperpendicularly deflecting optical signals), one or more of the MEMSoptical beam waveguides 632, 637 may be deflected by application ofappropriate deflection bias voltages at the deflection electrodes todeflect the MEMS optical beam waveguide (e,g., 632) to point toward thedeflection mirror structure not shown) in the waveguide 641, therebyperpendicularly deflecting the transmitted optical signal. Similarly, anoptical signal transmitted from the deflection mirror structure (notshown) in the waveguide 641 may be received at a MEMS optical beamwaveguide by applying appropriate deflection bias voltages at thedeflection electrodes to deflect the MEMS optical beam waveguide (e.g.,637) to point toward the deflection mirror structure (not shown) in thewaveguide 641.

The MEMS optical beam waveguides disclosed herein may also be used forother switching-related applications for internal die signal connectionsand/or die-to-die signal connections. For example, the MEMS optical beamwaveguides can be used to provide optical redundancy switchfunctionality within a die to deselect defective optical/circuitelements and replace them with spare optical/circuit elements. Anexample optical redundancy switch application is illustrated in FIG. 36which shows how a switched pair of MEMS optical beams withtwo-dimensional beam deflection can be used in a die 651 to provide anoptical signal path to a redundant circuit 660 to replace a defectiveoptical circuit component 657 in the signal path. As depicted, the die651 includes a pair of MEMS optical beam waveguides 652, 662 which aredisposed on opposite sides of a pair of optical circuits 657, 660 sothat the pair of MEMS optical beam waveguides 652, 662 may be deflectedwithin their respective cavities 653, 663 by application of one or moredeflection bias voltages to the deflection electrodes 654-655, 664-665positioned around each cavity 653, 663. By applying the appropriatedeflection bias voltages to the deflection electrodes 654-655, 664-665,the switched pair of MEMS optical beam waveguides 652, 662 may bedeflected in a first position to communicate optical signals to and froma first optical circuit 657 via first optical beams 656, 658 associatedwith the first optical circuit 657. As described herein, the deflectionof the pair of MEMS optical beam waveguides 652, 662 into the firstposition is caused by the electric fields that result from theapplication of the deflection bias voltages to the deflection electrodes654L/654R and 664L/664R which push or pull the waveguides 652, 662 tothe left (or “up” in the figure).

In the event that the optical circuit 657 (or either of the associatedfirst optical waveguides 656, 658) is determined to be defective, theappropriate deflection bias voltages may be applied to the deflectionelectrodes 654L/654R and 664L/664R to deflect the switched pair of MEMSoptical beam waveguides 652, 662 to a second position (indicated withdashed lines) to communicate optical signals to and from a secondredundant optical circuit 660 via second optical waveguides 659, 661associated with the second optical circuit 660. In this way, themultiple deflection electrodes 654-655, 664-665 positioned on and aroundthe switched pair of MEMS optical beam waveguides 652, 662 may be usedto deselect a defective optical/circuit element 657 and replace it witha spare or redundant circuit element 660.

FIG. 36 appears to provide a plan view of the optical redundancy switchfunctionality whereby the pair of optical circuits 657, 660 are locatedin the same plane and the switched pair of MEMS optical beam waveguides652, 662 have their cantilevered beams switching side-to-side (e.g.,left to right) under the electric field influence of the deflection biasvoltages applied to the deflection electrodes 654L/654R and 664L/664R.However, it will be appreciated that the pair of optical circuits 657,660 may instead be located in different planes of the die 651, in whichcase the switched pair of MEMS optical beam waveguides 652, 662 mayswitch their cantilevered beams vertically (e.g., up and down) under theelectric field influence of the deflection bias voltages applied to thedeflection electrodes 655, 665.

To provide additional details of selected embodiments for implementingoptical redundancy switch functionality, reference is now made to FIG.37 which shows an optical redundancy circuit 670 for replacing adefective optical circuit 674 with a redundant optical circuit 675 byrouting optical signals through a pair of optical switches 673, 676(e.g., double throw MEMS switches) which are placed in series with boththe optical circuit 674 and redundant circuit 675. While the opticalswitches 673, 676 may be implemented as MEMS optical beam waveguideswith two-dimensional beam deflection and feedback control, and desiredoptical switching structure may be used. However implemented, theoptical redundancy switch functionality provided by the opticalredundancy circuit 670 may implemented by using fuses to programmablycontrol the switched pair of MEMS optical beam waveguides 652, 662 todeselect a defective optical circuit 657 and replace it with a redundantoptical circuit 660. For example one or more electrical fuse circuits671 may be programmed to generate beam deflection control signals forcontrolling a beam plate voltage generator 672. In response, the beamplate voltage generator 672 generates and applies one or more biasvoltages to deflection plates (not shown) in the optical switches 673,676 to control their respective switching behavior to switch betweenfirst and second switching configurations.

In a first or “normal” switching configuration for the opticalredundancy circuit 670 shown in FIG. 37, a first optical switch 673receives bias voltages which configure the switch 673 into a firstswitch position (e.g., by switching a cantilevered optical MEMS beamwaveguide in the switch 673) for communicating optical signals to anoptical waveguide receiving port for a first optical circuit 674, suchas a modulator, receiver. etc. In addition, a second optical switch 676receives bias voltages which configure the switch 676 into a firstswitch position for receiving optical signals from an optical waveguidetransmit port at the first optical circuit 674. As described herein, thefirst switching configuration for the optical switches 673, 676 may becaused by the electric fields generated from the application of the biasvoltages to deflection plates which deflect a MEMS optical beamwaveguides as described herein.

The optical redundancy circuit 670 may also be configured in a second or“replacement” switching configuration by providing bias voltages toconfigure the first optical switch 673 into a second switch position(e.g., by switching a cantilevered MEMS optical beam waveguide in theswitch 673) for communicating optical signals to an optical waveguidereceiving port for a redundant optical circuit 675, such as a modulator,receiver, etc. In similar fashion, the second optical switch 676receives bias voltages which configure the switch 676 into a secondswitch position for receiving optical signals from an optical waveguidetransmit port at the redundant optical circuit 675. In the secondswitching configuration for the optical switches 673, 676, the electricfields generated from the application of the bias voltages to deflectionplates deflect the MEMS optical beam waveguides as described herein,causing the switches 673, 676 to switch substitute the redundant opticalcircuit 675.

The disclosed optical redundancy switch functionality may also be usedin other embodiments to provide die edge replacement of defective MEMSI/O beam deflector or aligner ports with redundant MEMS I/O beamdeflector or aligner ports. When an optical link between two MEMSoptical waveguide beams is determined to defective, one or both of theMEMS optical waveguide beams may be defective. Rather than providingtesting to determine the exact nature of the link failure, it is morecost effective for both MEMS optical waveguide beams may be replaced. Toprovide example details of selected die edge replacement embodiments,reference is now made to FIG. 38 which shows two separate die 680, 690having respective die edges 681, 682 separate from one another by anopen air gap. In each die 680, 690, an optical redundancy circuit682-686, 692-696 provides a replacement die edge MEMS I/O beam deflectorfor use with one or more normally-used die edge MEMS I/O beam deflectorsto form an optical port for each die. In this way, if one of thenormally-used die edge MEMS I/O beam deflectors is defective, it may bereplaced with the replacement die edge MEMS I/O beam deflector byrouting optical signals through an optical switch 684 (e.g., doublethrow MEMS switches).

For example, the optical redundancy circuit 682-686 in the first die 680may include an optical switch 684 which is connected to a pair of beamdeflectors 685, 686. In selected embodiments, the optical switch 684 andbeam deflectors 685, 686 may be implemented as MEMS optical beamwaveguides with two-dimensional beam deflection and feedback controlsubstantially as described herein. Upon detecting that one of the beamdeflectors (e.g., deflector 685 or deflector 695) is defective, theoptical switch 684 switches from a first position to an alternateposition to re-route the signal communication path to effectivelydeselect the defective beam deflector and substitute the replacement dieedge MEMS I/O beam deflector (e.g., 686). The control of the opticalswitch 684 (as well as beam deflectors 685, 686) may be controlled byprogramming one or more electrical fuse circuits 682 to generate beamdeflection control signals for the beam plate voltage generator 683which supplies one or more bias voltages to deflection plates (notshown) in the optical switch 684 (as well as beam deflectors 685, 686)to control switching behavior. Correspondingly, the optical redundancycircuit 692-696 in the second die 690 may include an optical switch 694which is connected to a pair of beam deflectors 695, 696 which may beimplemented as MEMS optical beam waveguides with two-dimensional beamdeflection and feedback control. Upon detecting a defect in one of theMEMS optical beam waveguide deflectors (e.g., deflector 685 or deflector695), the optical switch 694 switches from a first position to analternate position to effectively deselect the defective beam deflectorand substitute the replacement die edge MEMS I/O beam deflector (e.g.,696). Again, the control of the optical switch 694 (and beam deflectors695, 696) may be controlled by programming one or more electrical fusecircuits 692 to generate beam deflection control signals for the beamplate voltage generator 693 which supplies bias voltage(s) to deflectionplates (not shown) to control switching behavior of the optical switch694 (as well as beam deflectors 685, 686). In some embodiments, MEMSoptical beam waveguide deflectors are replaced in pairs (e.g., 685,695or 686,696) to minimize deflections since it is difficult to detectwhich MEMS optical beam waveguide of a pair is defective.

In yet other replacement embodiments, the disclosed optical redundancyswitch functionality may be used to provide die edge replacement toshift a plurality of die edge optical MEMS I/O beam deflector or alignerports around a defective optical MEMS 110 beam deflector or aligner portby using a spare optical MEMS I/O beam deflector or aligner port on eachdie. To provide example details of such replacement embodiments,reference is now made to FIG. 39 which shows two separate die 700, 720having respective die edges 701, 721 separate from one another by anopen air gap. In each die 700, 720, an optical redundancy circuit702-710, 722-730 includes a plurality of optical switches (e.g., doublethrow MEMS optical beam waveguide switches) and associated plurality ofnormally-used die edge MEMS I/O beam deflectors 706-709, 726-729 to forman optical port for each die. In normal mode of operation, the pluralityof normally-used die edge MEMS I/O beam deflectors 706-709, 726-729 oneach die 700, 720 are aligned to transmit and/or receive a plurality ofoptical signals therebetween. In addition, a replacement die edge MEMS110 beam deflector 710, 730 is provided at the edge of a plurality ofnormally-used die edge MEMS I/O beam deflectors to be used to form theoptical port for each die if required. With the replacement deflectors710, 730 in place, if one of the normally-used beam deflectors isdefective, all of the optical switches—from the defective beam deflectorto the replacement beam deflector—are switched to an alternate positionto thereby deselect the defective beam deflector and substitute thereplacement beam deflector at the edge of the port. As a result, thebeam deflectors 706, 708-710 on the first die 700 and beam deflectors726, 728-729 on the second die 720 are configured and aligned during aswitched mode of operation to transmit and/or receive a plurality ofoptical signals 711, 712-713 therebetween.

For example, the optical redundancy circuit 702-710 in the first die 710may include a plurality of optical switches 702-705, each of which isconnected to a pair abeam deflectors 706-710 which include a pluralityof normally-used beam deflectors 706-709 and a replacement beamdeflector 710. In the depicted connection configuration, each opticalswitch (e.g., 703) is connected in a “normal” configuration to a firstbeam deflector (e.g., 707) and is connected in a “switched”configuration to a second beam deflector (e.g., 708) which may beadjacent to the first beam deflector. In selected embodiments, theoptical switches 702-705 and beam deflectors 706-710 may be implementedas MEMS optical beam waveguides with two-dimensional beam deflection andfeedback control substantially as described herein. Correspondingly, theoptical redundancy circuit 722-730 in the second die 720 may include aplurality of optical switches 722-725, each of which is connected to apair of beam deflectors 726-730 which include a plurality ofnormally-used beam deflectors 726-729 and a replacement beam deflector730. As illustrated, each optical switch (e.g., 723) is connected in a“normal” configuration to a first beam deflector (e.g., 727) and isconnected in a “switched” configuration to a second beam deflector(e.g., 728) which may be adjacent to the first beam deflector. Upondetecting that one of the beam deflectors (e.g., deflector 707) isdefective (as indicated with left-to-right crosshatching), theassociated optical switch (e.g., 703) and all “downstream” opticalswitches (e.g., 704-705) in the first die 700 are switched from a firstposition to an alternate position to re-route the signal communicationpath, thereby effectively deselecting the defective beam deflector 707and sequentially substituting the adjacent beam deflectors 708-710. Acorresponding reconfiguration of switches in the second die 720 is alsomade to switch the corresponding optical switch (e.g., 723) and all“downstream” optical switches (e.g., 724-725) from a first position toan alternate position to re-route the signal communication path, therebyeffectively deselecting the beam deflector 727 corresponding to thedefective beam deflector 707 and sequentially substituting the adjacentbeam deflectors 728-730. As a result, the spare beam deflectors 710, 730(as indicated with left-to-right crosshatching) are used in the switchedmode. The corresponding reconfiguration of switches on the second die720 may be accomplished using any desired technique, such as sending oneor more control signals (not shown) to any switch using the defectivebeam deflector 707 (and to any downstream switches at the second die720) to provide notification of the changed port pin location. Thoughnot shown, the control of the optical switches 702-705, 722-725 (as wellas beam deflectors 706-710, 726-730) may be controlled by supplying biasvoltages to the deflection plates in the optical switches and beamdeflectors under control of programmed fuse circuits (not shown) tocontrol switching behavior.

Turning now to FIG. 40, there is shown a simplified flow chart of a beamcontrol method 800 for generating MEMS beam plate voltages for verticaland lateral deflection electrodes in accordance with selectedembodiments of the present disclosure. As will be appreciated, theindividual steps in the process flow 800 may be performed by a singleentity, or by a plurality of different entities. Once the method starts(step 801), a plurality of die are assembled, oriented, and aligned inrelation to a system board (step 802). In each die, verticalthrough-silicon-vias (TSVs) are provided for communicating vertically(e.g., between stacked die). In addition, each die may include lateraloptical feedthroughs (e.g. silicon or oxide waveguides) for transmittingoptical signals through the die. Finally, each die also includesdeflectable MEMS waveguide beams with two-dimensional beam deflectionand feedback control substantially as described herein. On the bottom ofat least the bottom die, flip-chip bumps or other suitable conductorelements are formed to establish vertical signal and power conductorconnections between the die stack and the system board.

At step 803, one or more initial settings may be calibrated and storedas designated DAC counter settings to compensate for beam deflectionsresulting from manufacturing stresses or defects. The initialcalibration and storage of DAC counter setting values can occur at testor during startup, and is used to zero the beam deflection in the Xand/or Y dimensions. In selected embodiments, the initial settings maybe stored in non-volatile memory, such as a fuse or flash memory device.As will be appreciated, initial settings may be calibrated for each beamdeflection plate, for each deflectable MEMS waveguide beam, or asdesired.

At step 804, values representing expected X and/or Y beam deflectionsare calculated and stored. In selected embodiments, the expected Xand/or Y beam deflection values may be calculated with control logic andstored in memory for each beam deflection plate, for each deflectableMEMS waveguide beam, or as desired.

At step 805, the corresponding calibration setting values and expected Xand/or Y beam deflection values may be added, combined, or otherwisecomputed using control logic, with the resulting sum representing the Xand/or Y deflection results for each beam deflection plate. To allow thecomputational results to be cyclically computed over time, the X and/orY deflection results may be loaded or stored in designated registers orother storage devices for subsequent retrieval, processing, and updateoperations.

At step 806, the X/Y deflection results may be retrieved from registerstorage and loaded into counters at a corresponding digital-to-analog(DAC) circuit. For example, first and second DAC circuits may be loaded,respectively, with the X and Y deflection results.

At step 807, the DAC circuit(s) use the loaded X and Y deflectionresults to generate X and Y voltage outputs which are supplied tostorage capacitors that are coupled to the beam deflection plates. Inselected embodiments, the X and Y DAC output voltages are stored,respectively, to first and second storage capacitors which are connectedto X and Y beam deflection plates. As will be appreciated, different Xand Y DAC output voltages may be generated and stored for each beamdeflection plate, for each deflectable MEMS waveguide beam, or asdesired. In this way, each beam deflection plate is biased with adeflection voltage.

At step 808, the biased beam deflection plates are used to controltwo-dimensional deflection for purposes of aligning the deflectable MEMSoptical beam waveguides. By positioning the beam deflection plates aboveand on each side of the deflectable. MEMS optical beam waveguide, X andY voltage outputs may be applied as separate deflection bias voltagesfor a plurality of different deflection electrodes to align the MEMSoptical beam waveguide. As described herein, the direct opticalcommunication links may be established by applying one or moredeflection voltages to a plurality of deflection electrodes that arepositioned around each deflectable MEMS optical beam waveguide. Theresulting electric fields between the electrodes and waveguides willdeflect the MEMS optical beam waveguides for a given optical signal intoalignment with one another. In embodiments where there are a pluralityof vertical and lateral beam deflection plates positioned along thedeflectable MEMS optical beam waveguide, the deflection voltages appliedto different beam deflection plates may be individually controlled.

At step 809, direct optical communication links are established betweenadjacent die using the aligned MEMS optical beam waveguide(s). Oncealigned, the optical feedthroughs and deflectable MEMS waveguide beamsare used to communicate optical signal information between and throughadjacent die. At this point, a calibration procedure may be used torefine beam alignment. For example, when no data signal is yet availableor when a periodic re-calibration procedure is initiated, the opticalbeam signal may be sent as a dummy optical beam signal that is passedthrough the lateral optical feed-through to the calibrating MEMS opticalbeam waveguide to be received by the target MEMS optical beam waveguidein the adjacent die.

At step 810, feedback electrical signals (FB) returned from the targetMEMS optical beam waveguide and receiver may be used to update thedeflection voltages at the beam deflection plates over time. In selectedembodiments, a FB control signal may be coupled through the verticalconnections in the die (e.g., TSVs) and substrate board connections tobe returned to the die with the source MEMS optical beam waveguide. Inthis way, a FB control signal may provide an indication of the intensityof the received optical beam by the target MEMS optical beam waveguidewhich is processed by control logic to more accurately adjust and updatethe deflection voltages to maintain alignment of the calibrating MEMSoptical beam waveguide. The update process may implement a predeterminedset of increments to the X and/or Y beam deflection values to cause thesource MEMS optical beam waveguide to sweep through a predeterminedpattern until the FB control signal meets or exceeds a threshold signalintensity value, indicating that alignment is achieved. At step 811, theprocess ends.

By now it should be appreciated that there is provided herein anintegrated circuit MEMS optical beam waveguide apparatus withtwo-dimensional deflection control and associated methods of operationand fabrication. In the disclosed integrated circuit apparatus, beamcontrol circuitry is provided for controlling deflection of a firstcantilevered MEMS optical beam waveguide which extends into a deflectioncavity. The beam control circuitry includes a plurality of separatedeflection electrodes and a bias circuit. The deflection electrodes arepositioned (e.g., on walls of the deflection cavity) to controldeflection of the first cantilevered MEMS optical beam waveguide, andmay include a plurality of vertical deflection electrodes positioned onwalls of the deflection cavity to control vertical deflection of thefirst cantilevered MEMS optical beam waveguide. The bias circuit isconnected to provide separately controllable bias voltages to theseparate deflection electrodes, thereby generating controlled,two-dimensional deflection of the first cantilevered MEMS optical beamwaveguide. In selected embodiments, the bias circuit includes one ormore storage devices (e.g., programmable registers or fuses) for storingone or more calibrated digital deflection values to compensate for beamdeflections at the first cantilevered MEMS optical beam waveguideresulting from manufacturing stresses or defects. In addition, the biascircuit may include a programmable register for storing a digitaldeflection value; a digital-to-analog converter for converting thedigital deflection value to an analog voltage value; a driver circuitfor generating a first bias voltage from the analog voltage value; and amulti-tap resistive circuit for generating a plurality of bias voltagesfor connection to the plurality of separate deflection electrodes. Inother embodiments, the bias circuit may include a plurality ofprogrammable registers for storing lateral and vertical deflectionvalues for each of a plurality of cantilevered MEMS optical beamwaveguides; control logic for processing the lateral and verticaldeflection values to select a pair of lateral and vertical deflectionvalues for the first cantilevered MEMS optical beam waveguide; one ormore digital-to-analog converter circuits for converting the pair oflateral and vertical deflection values to a pair of lateral and verticalbias voltages; and a plurality of switched capacitor circuits forstoring the pair of lateral and vertical bias voltages, where eachswitched capacitor circuit is respectively connected between adigital-to-analog converter circuit and a corresponding separatedeflection electrode. For example, each switched capacitor circuit maybe formed with a control switch connected between a digital-to-analogconverter circuit and a corresponding beam alignment capacitor tothereby couple the lateral and/or vertical bias voltages to thecorresponding separate deflection electrode(s). In operation, the biascircuit may generate a first bias voltage for electrical connection to afirst deflection electrode located near an anchored base of the firstcantilevered MEMS optical beam waveguide, and may generate a second biasvoltage having a greater magnitude for electrical connection to a seconddeflection electrode located near a distal end of the first cantileveredMEMS optical beam waveguide. In other embodiments, the bias circuitgenerates a first polarity bias voltage for electrical connection to afirst deflection electrode located near an anchored base of the firstcantilevered MEMS optical beam waveguide, and generates a second,opposite polarity bias voltage for electrical connection to a seconddeflection electrode located near a distal end of the first cantileveredMEMS optical beam waveguide. The beam control circuitry may also includecontrol logic for processing a control feedback signal from theplurality of separate deflection electrodes to adjust the controlled,two-dimensional deflection of the first cantilevered MEMS optical beamwaveguide over time.

In another form, there is provided a method and apparatus for providingbeam control for an MEMS optical beam. As disclosed, an integratedcircuit die is provided that includes a cantilevered MEMS optical beamwhich extends into a deflection cavity, and a plurality of deflectionelectrodes positioned on wails of the deflection cavity to controldeflection of the cantilevered MEMS optical beam. To compensate for aninitial beam deflection in the cantilevered MEMS optical beam resultingat least in part from manufacturing stresses or defects in thecantilevered MEMS optical beam, digital calibration values are retrievedfrom memory (e.g., in one or more programmable fuses or flash memorystorage devices). Using the digital calibration values, digital beamdeflection values are computed and used to generate deflection biasvoltages for storage, where each deflection bias voltage is stored on astorage capacitor that is connected to a corresponding one of theplurality of deflection electrodes. In selected embodiments, the digitalbeam deflection values may be computed by first computing digitaldeflection values representing an adjusted beam deflection for thecantilevered MEMS optical beam, and then adding the digital calibrationvalues and digital deflection values to compute digital beam deflectionvalues which are stored in a plurality of registers. Once computed, thedigital beam deflection values may be used to generate deflection biasvoltages by loading the digital beam deflection values intocorresponding digital-to-analog converters for conversion intodeflection bias voltages. By applying the deflection bias voltages tothe plurality of deflection electrodes, signal information is opticallycommunicated from a first communication device physically coupled to theintegrated circuit die by transferring optical signals along thecantilevered MEMS optical beam which is deflected by electric fieldforces exerted on the cantilevered MEMS optical beam in response todeflection bias voltages applied to the deflection electrodes. Inselected embodiments, the signal information is a dummy signal that isoptically communicated along the cantilevered MEMS optical beam forreception at a target MEMS optical beam waveguide for use in generatinga feedback control signal that is processed to adjust alignment of thecantilevered MEMS optical beam.

In yet another form, there is provided a multiple die stack computersystem and method for manufacturing and operating same. As disclosed,the system includes first and second integrated circuit devices and beamcontrol circuitry for controlling optical communications therebetween.The first integrated circuit device may include an optical transmitter,a first cantilevered MEMS optical beam waveguide which extends into afirst deflection cavity, and a first plurality of deflection electrodespositioned on walls of the first deflection cavity to control deflectionof the first cantilevered MEMS optical beam waveguide. In similarfashion, the second integrated circuit device may include an opticalreceiver, a second cantilevered MEMS optical beam waveguide whichextends into a second deflection cavity, and a second plurality ofdeflection electrodes positioned on walls of the second deflectioncavity to control deflection of the second cantilevered MEMS opticalbeam waveguide. The beam control circuitry is used to controltwo-dimensional deflection of the first cantilevered MEMS optical beamwaveguide into alignment with the second cantilevered MEMS optical beamwaveguide by generating a plurality of deflection bias voltages whichare coupled to the first and second plurality of deflection electrodesto exert electric field forces on the first and second cantilevered MEMSoptical beam waveguides. In selected embodiments, the beam controlcircuitry includes a memory for storing digital calibration values tocompensate for an initial beam deflection in the cantilevered MEMSoptical beam, such as programmable fuses or flash memory storage forstoring digital calibration values to compensate for initial beamdeflections in the first and second cantilevered MEMS optical beamsresulting from manufacturing stresses or defects, thereby zeroingdeflection in the first and second cantilevered MEMS optical beams. Thebeam control circuitry may also include registers for storing digitalbeam deflection values; control logic for transforming the digitalcalibration values into digital beam deflection values; bias generatorcircuits for generating deflection bias voltages from the digital beamdeflection values; and storage capacitors for storing the deflectionbias voltages, where each storage capacitor is connected to acorresponding one of the plurality of deflection electrodes. Inoperation, the beam control circuitry generates a first pair ofdeflection bias voltages for electrical connection to a first pair oflateral deflection electrodes located near an anchored base of the firstcantilevered MEMS optical beam waveguide, and generates a second pair ofdeflection bias voltages for electrical connection to a second pair oflateral deflection electrodes located near a distal end of the firstcantilevered MEMS optical beam waveguide, where the first pair ofdeflection bias voltages may exert a first electric field force on thefirst cantilevered MEMS optical beam waveguide that is smaller oropposite polarity from a second electric field force exerted on thefirst cantilevered MEMS optical beam waveguide by the second pair ofdeflection bias voltages. The system may also include a feedback systemincluding a non-optical communication link between the first and secondintegrated circuit devices for providing feedback information regardingoptical signal information transmitted over the first cantilevered MEMSoptical beam waveguide to the second cantilevered MEMS optical beam,where the beam control circuitry uses the feedback information togenerate a plurality of adjusted deflection bias voltages which arecoupled to the first and second plurality of deflection electrodes.

Although the described exemplary embodiments disclosed herein aredirected to various high density, low power, high performanceinformation systems with integrated optical communications usingdeflectable MEMS optical beam waveguides with two-dimensional alignmentand controlled feedback to adjust beam alignment and methods for makingand operating same, the present invention is not necessarily limited tothe example embodiments which illustrate inventive aspects of thepresent invention that are applicable to a wide variety of fabricationprocesses and/or structures. Thus, the particular embodiments disclosedabove are illustrative only and should not be taken as limitations uponthe present invention, as the invention may be modified and practiced indifferent but equivalent manners apparent to those skilled in the arthaving the benefit of the teachings herein. For example, while the beamcontrol features are described with example semiconductor processdetails for implementing various processor and memory die stackembodiments, this is merely for convenience of explanation and notintended to be limiting and persons of skill in the art will understandthat the principles taught herein apply to other semiconductorprocessing steps and/or different types of integrated circuit devices.As a result, the various references to a processor die will beunderstood by those skilled in the art to refer to any processor,microprocessor, microcontroller, digital signal processor, audioprocessor, or other defined logic circuit and any combination thereof.Likewise, the various references to a memory die will be understood bythose skilled in the art to refer to any memory die, such as DRAM,Flash, SRAM, MRAM, or other defined memory circuit and any combinationthereof, and may also refer to a memory controller. Moreover, thethicknesses, materials, and processing details for the described layersmay deviate from the disclosed examples. In addition, the terms ofrelative position used in the description and the claims, if any, areinterchangeable under appropriate circumstances such that embodiments ofthe invention described herein are, for example, capable of operation inother orientations than those illustrated or otherwise described herein.The term “coupled,” as used herein, is defined as directly or indirectlyconnected in an electrical or non-electrical manner. Accordingly, theforegoing description is not intended to limit the invention to theparticular form set forth, but on the contrary, is intended to coversuch alternatives, modifications and equivalents as may be includedwithin the spirit and scope of the invention as defined by the appendedclaims so that those skilled in the art should understand that they canmake various changes, substitutions and alterations without departingfrom the spirit and scope of the invention in its broadest form.

Benefits, other advantages, and solutions to problems have beendescribed above with regard to specific embodiments. However, thebenefits, advantages, solutions to problems, and any element(s) that maycause any benefit, advantage, or solution to occur or become morepronounced are not to be construed as a critical, required, or essentialfeature or element of any or all the claims. As used herein, the terms“comprises,” “comprising,” or any other variation thereof, are intendedto cover a non-exclusive inclusion, such that a process, method,article, or apparatus that comprises a list of elements does not includeonly those elements but may include other elements not expressly listedor inherent to such process, method, article, or apparatus.

What is claimed is:
 1. An apparatus comprising: beam control circuitryfor controlling deflection of a first cantilevered MEMS optical beamwaveguide, comprising: a plurality of separate deflection electrodespositioned to control deflection of the first cantilevered MEMS opticalbeam waveguide; and a bias circuit connected to provide separatelycontrollable bias voltages to the plurality of separate deflectionelectrodes, thereby generating controlled, two-dimensional deflection ofthe first cantilevered MEMS optical beam waveguide.
 2. The apparatus ofclaim 1, where the plurality of separate deflection electrodes comprisesa plurality of vertical deflection electrodes positioned to controlvertical deflection of the first cantilevered MEMS optical beamwaveguide.
 3. The apparatus of claim 1, where the bias circuit generatesa first bias voltage for electrical connection to a first deflectionelectrode located near an anchored base of the first cantilevered MEMSoptical beam waveguide, and generates a second bias voltage having agreater magnitude for electrical connection to a second deflectionelectrode located near a distal end of the first cantilevered MEMSoptical beam waveguide.
 4. The apparatus of claim 1, where the biascircuit generates a first polarity bias voltage for electricalconnection to a first deflection electrode located near an anchored baseof the first cantilevered MEMS optical beam waveguide, and generates asecond, opposite polarity bias voltage for electrical connection to asecond deflection electrode located near a distal end of the firstcantilevered MEMS optical beam waveguide.
 5. The apparatus of claim 1,where the bias circuit comprises: a programmable register for storing adigital deflection value; a digital-to-analog converter for convertingthe digital deflection value to an analog voltage value; a drivercircuit for generating a first bias voltage from the analog voltagevalue; and a multi-tap resistive circuit for generating a plurality ofbias voltages for connection to the plurality of separate deflectionelectrodes.
 6. The apparatus of claim 1, where the bias circuitcomprises: a plurality of programmable registers for storing lateral andvertical deflection values for each of a plurality of cantilevered MEMSoptical beam waveguides; control logic for processing the lateral andvertical deflection values to select a pair of lateral and verticaldeflection values for the first cantilevered MEMS optical beamwaveguide; and one or more digital-to-analog converter circuits forconverting the pair of lateral and vertical deflection values to a pairof lateral and vertical bias voltages.
 7. The apparatus of claim 6,further comprising a plurality of switched capacitor circuits forstoring the pair of lateral and vertical bias voltages, where eachswitched capacitor circuit is respectively connected between adigital-to-analog converter circuit and a corresponding separatedeflection electrode.
 8. The apparatus of claim 7, where each switchedcapacitor circuit comprises a control switch connected between adigital-to-analog converter circuit and a corresponding beam alignmentcapacitor to thereby couple a lateral or vertical bias voltage to thecorresponding separate deflection electrode.
 9. The apparatus of claim1, where the bias circuit comprises one or more storage devices forstoring one or more calibrated digital deflection values to compensatefor beam deflections at the first cantilevered MEMS optical beamwaveguide resulting from manufacturing stresses or defects.
 10. Theapparatus of claim 1, where beam control circuitry further comprisescontrol logic for processing a control feedback signal from theplurality of separate deflection electrodes to adjust the controlled,two-dimensional deflection of the first cantilevered MEMS optical beamwaveguide over time.
 11. A method comprising: providing an integratedcircuit die comprising a cantilevered MEMS optical beam and a pluralityof deflection electrodes positioned to control deflection of thecantilevered MEMS optical beam; retrieving digital calibration valuesfor compensating for an initial beam deflection in the cantilevered MEMSoptical beam; generating deflection bias voltages from the digitalcalibration values for storage, where each deflection bias voltage isstored on a storage capacitor that is connected to a corresponding oneof the plurality of deflection electrodes; and transferring an opticalsignal along the cantilevered MEMS optical beam which is deflected byelectric field forces exerted on the cantilevered MEMS optical beam inresponse to deflection bias voltages applied to the plurality ofdeflection electrodes.
 12. The method of claim 11, where the initialbeam deflection in the cantilevered MEMS optical beam results at leastin part from manufacturing stresses or defects in the cantilevered MEMSoptical beam.
 13. The method of claim 11, where retrieving digitalcalibration values comprises retrieving one or more digital calibrationvalues from one or more programmable fuses or flash memory storage. 14.The method of claim 11, further comprising computing digital beamdeflection values from the digital calibration values by: computingdigital deflection values representing an adjusted beam deflection forthe cantilevered MEMS optical beam; adding the digital calibrationvalues and digital deflection values to compute digital beam deflectionvalues; and storing the digital beam deflection values in a plurality ofregisters.
 15. The method of claim 14, where generating deflection biasvoltages comprises loading the digital beam deflection values intocorresponding digital-to-analog converters for conversion intodeflection bias voltages.
 16. The method of claim 11, where transferringan optical signal comprises transferring a dummy signal along thecantilevered MEMS optical beam for reception at a target MEMS opticalbeam waveguide for use in generating a feedback control signal that isprocessed to adjust alignment of the cantilevered MEMS optical beam. 17.A system comprising: a first integrated circuit device comprising anoptical transmitter, a first cantilevered MEMS optical beam waveguide,and a first plurality of deflection electrodes positioned to controldeflection of the first cantilevered MEMS optical beam waveguide; asecond integrated circuit device comprising an optical receiver, asecond cantilevered MEMS optical beam waveguide, and a second pluralityof deflection electrodes positioned to control deflection of the secondcantilevered MEMS optical beam waveguide; beam control circuitry forcontrolling two-dimensional deflection of the first cantilevered MEMSoptical beam waveguide into alignment with the second cantilevered MEMSoptical beam waveguide by generating a plurality of deflection biasvoltages which are coupled to the first and second plurality ofdeflection electrodes to exert electric field forces on the first andsecond cantilevered MEMS optical beam waveguides; and a plurality ofstorage capacitors for storing the deflection bias voltages, where eachstorage capacitor is connected to a corresponding one of the pluralityof deflection electrodes.
 18. The system of claim 17, furthercomprising: a feedback system including a non-optical communication linkfor receiving feedback information regarding optical signal informationtransmitted over the first cantilevered MEMS optical beam waveguide tothe second cantilevered MEMS optical beam, where the beam controlcircuitry uses the feedback information to generate a plurality ofadjusted deflection bias voltages which are coupled to the first andsecond plurality of deflection electrodes.
 19. The system of claim 17,where the beam control circuitry comprises: memory for storing digitalcalibration values to compensate for an initial beam deflection in thecantilevered MEMS optical beam; a plurality of registers for storingdigital beam deflection values; control logic for transforming thedigital calibration values into digital beam deflection values; and biasgenerator circuits for generating deflection bias voltages from thedigital beam deflection values.
 20. The system of claim 19, where thememory comprises programmable fuses or flash memory storage for storingdigital calibration values to compensate for initial beam deflections inthe first and second cantilevered MEMS optical beams resulting frommanufacturing stresses or defects, thereby zeroing deflection in thefirst and second cantilevered MEMS optical beams.